Part Name
         Description
HYB18T512161BF

 512-Mbit x16 DDR2 SDRAM ( 41 Page)


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Internet Data Sheet
Rev. 1.43, 2006-11
3
03292006-L40N-L04G
HYB18T512161BF–20/22/25/28/33
512-Mbit Double-Data-Rate-Two SDRAM
1Overview
This chapter gives an overview of the 512-Mbit Double-Data-Rate-Two SDRAM product family for graphics application and
describes its main characteristics.
1.1
Features
The 512-Mbit Double-Data-Rate-Two SDRAM offers the following key features:
• 1.8 V
± 0.1V V
DD for [–25/–28/–33]
2.0 V
± 0.1V V
DD for [–20/–22]
• 1.8 V
± 0.1V V
DDQ for [–25/–28/–33]
2.0 V
± 0.1V V
DDQ for [–20/–22]
• DRAM organizations with 16 data in/outputs
• Double Data Rate architecture:
– two data transfers per clock cycle
– four internal banks for concurrent operation
• Programmable CAS Latency: 3, 4, 5, 6, 7
• Programmable Burst Length: 4 and 8
• Differential clock inputs (CK and CK)
• Bi-directional, differential data strobes (DQS and DQS) are
transmitted / received with data. Edge aligned with read
data and center-aligned with write data.
• DLL aligns DQ and DQS transitions with clock
•DQS can be disabled for single-ended data strobe
operation
• Commands entered on each positive clock edge, data and
data mask are referenced to both edges of DQS
• Data masks (DM) for write data
• Posted CAS by programmable additive latency for better
command and data bus efficiency
• Off-Chip-Driver impedance adjustment (OCD) and On-
Die-Termination (ODT) for better signal quality.
• Auto-Precharge operation for read and write bursts
• Auto-Refresh, Self-Refresh and power saving Power-
Down modes
• Average Refresh Period 7.8
µs at a T
CASE lower than
85 °C, 3.9
µs between 85 °C and 95 °C
• Full Strength and reduced Strength (60%) Data-Output
Drivers
• 2kB page size
• Packages: P-TFBGA-84 for
×16 components
• RoHS Compliant Products1)
TABLE 1
Ordering Information for RoHS compliant products
1) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and electronic equipment as defined
in the directive 2002/95/EC issued by the European Parliament and of the Council of 27 January 2003. These substances include mercury,
lead, cadmium, hexavalent chromium, polybrominated biphenyls and polybrominated biphenyl ethers.
Product Number
Org.
Clock (MHz)
Package
HYB18T512161BF–20/22/25/28/33
×16
500/450/400/350/300
P-TFBGA-84
1  2  3  4  5  6  7  8  9  10  11  12  13  14  15  16  17  18  19  20  21  22  23  24  25  26  27  28  29  30  31  32  33  34  35  36  37  38  39  40  41 



Related Electronics Part Number

Part NumberComponents DescriptionHtml ViewManufacturer
HYB18T512161B2F512-Mbit x16 DDR2 SDRAM 1 2 3 4 5 MoreQimonda AG
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HYB18T512400B2C512-Mbit Double-Data-Rate-Two SDRAM 1 2 3 4 5 MoreQimonda AG
HYB18T512400B512-Mbit Double-Data-Rate-Two SDRAM 1 2 3 4 5 MoreQimonda AG
HYB18T512400BF512-Mbit Double-Data-Rate-Two SDRAM 1 2 3 4 5 MoreQimonda AG
HYB25D512800BT512-Mbit Double-Data-Rate SDRAM 1 2 3 4 5 MoreQimonda AG
HYB25DC512800B512-Mbit Double-Data-Rate SDRAM 1 2 3 4 5 MoreQimonda AG

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