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HYB18TC1G800BF-3.7 Datasheet(PDF) 6 Page - Qimonda AG |
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HYB18TC1G800BF-3.7 Datasheet(HTML) 6 Page - Qimonda AG |
6 / 65 page Internet Data Sheet Rev. 1.21, 2007-07 6 02282007-F8UP-4HSU HYB18TC1G[80/16]0BF 1-Gbit Double-Data-Rate-Two SDRAM 1.2 Description The 1-Gbit DDR2 DRAM is a high-speed Double-Data-Rate- Two CMOS Synchronous DRAM device containing 1,073,741,824 bits and internally configured as anoctal quad- bank DRAM. The 1-Gb device is organized as either 16 Mbit ×8 I/O ×8 banks or 8 Mbit ×16 I/O ×8 banks chip. These synchronous devices achieve high speed transfer rates starting at 400 Mb/sec/pin for general applications. The device is designed to comply with all DDR2 DRAM key features: 1. Posted CAS with additive latency, 2. Write latency = read latency - 1, 3. Normal and weak strength data-output driver, 4. Off-Chip Driver (OCD) impedance adjustment 5. On-Die Termination (ODT) function. All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK falling). All I/Os are synchronized with a single ended DQS or differential DQS-DQS pair in a source synchronous fashion. A 17 bit address bus for ×8 organised components and a 16 bit address bus for ×16 components is used to convey row, column and bank address information in a RAS-CAS multiplexing style. The DDR2 device operates with a 1.8 V ± 0.1 V power supply. An Auto-Refresh and Self-Refresh mode is provided along with various power-saving power-down modes. The functionality described and the timing specifications included in this data sheet are for the DLL Enabled mode of operation. The DDR2 SDRAM is available in PG-TFBGA package. TABLE 5 Ordering Information for RoHS compliant products Note: For product nomenclature see Chapter 9 of this data sheet Product Type Org. Speed CAS-RCD-RP Latencies1)2)3) 1) CAS: Column Address Strobe 2) RCD: Row Column Delay 3) RP: Row Precharge Clock (MHz) Package HYB18TC1G160BF-2.5 ×16 DDR2-800E 6-6-6 400 PG-TFBGA-84 HYB18TC1G800BF-2.5 ×8 DDR2-800E 6-6-6 400 PG-TFBGA-68 HYB18TC1G160BF-3S ×16 DDR2-667D 5-5-5 333 PG-TFBGA-84 HYB18TC1G800BF-3S ×8 DDR2-667D 5-5-5 333 PG-TFBGA-68 HYB18TC1G160BF-3.7 ×16 DDR2-533C 4-4-4 266 PG-TFBGA-84 HYB18TC1G800BF-3.7 ×8 DDR2-533C 4-4-4 266 PG-TFBGA-68 HYB18TC1G160BF-5 ×16 DDR2-400B 3-3-3 200 PG-TFBGA-84 HYB18TC1G800BF-5 ×8 DDR2-400B 3-3-3 200 PG-TFBGA-68 |
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