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HYS64T128020EML-3.7-B Datasheet(PDF) 3 Page - Qimonda AG

Part # HYS64T128020EML-3.7-B
Description  214-Pin Unbuffered DDR2 SDRAM MicroDIMM Modules Low Power
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Manufacturer  QIMONDA [Qimonda AG]
Direct Link  http://www.qimonda.com
Logo QIMONDA - Qimonda AG

HYS64T128020EML-3.7-B Datasheet(HTML) 3 Page - Qimonda AG

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Preliminary Internet Data Sheet
Rev. 0.5, 2007-05
3
05212007-7F24-MITO
HYS64T128020EML-[3S/3.7/5]-B
Unbuffered DDR2 SDRAM MicroDIMM Modules
1Overview
This chapter gives an overview of the 214-Pin Unbuffered DDR2 SDRAM MicroDIMM Modules product family and describes
its main characteristics.
1.1
Features
List of Micro-DIMM features
• 214-Pin PC-5300,PC2-4200 and PC2-3200 DDR2
SDRAM memory modules for use as main memory when
installed in systems such as mobile personal computers.
• 128M
× 64 module organisation and 64M ×16 chip
organisation
• JEDEC standard Double-Data-Rate-Two Synchronous
DRAMs (DDR2 SDRAM) with a single + 1.8 V (± 0.1 V)
power supply
• 1 GB modules built with 1 Gb DDR2 SDRMs in chipsize
packages PG-TFBGA-84.
• Programmable CAS Latencies (3, 4 and 5), Burst Length
(8 & 4)
• Burst Refresh, Distributed Refresh and Self Refresh
• All inputs and outputs SSTL_18 compatible
• OCD (Off-Chip Driver Impedance Adjustment) and ODT
(On-Die Termination)
• Serial Presence Detect with E2PROM
• Micro-DIMM Dimensions (nominal): 30 mm high, 54.0 mm
wide
• Based on JEDEC standard reference layouts Raw Card
“A”
• RoHS compliant product1)
TABLE 1
Performance Table
1) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and electronic equipment as defined
in the directive 2002/95/EC issued by the European Parliament and of the Council of 27 January 2003. These substances include mercury,
lead, cadmium, hexavalent chromium, polybrominated biphenyls and polybrominated biphenyl ethers.
Product Type Speed Code
-3S
–3.7
–5
Units
Speed Grade
PC2-5300
PC2–4200
PC2–3200
CAS-RCD-RP latencies
5-5-5
4-4-4
3-3-3
tck
Max. Clock Frequency
@CL5
f
CK5
333
266
200
MHz
@CL4
f
CK4
266
266
200
MHz
@CL3
f
CK3
200
200
200
MHz
Min. RAS-CAS-Delay
t
RCD
15
15
15
ns
Min. Row Precharge Time
t
RP
15
15
15
ns
Min. Row Active Time
t
RAS
45
45
40
ns
Min. Row Cycle Time
t
RC
60
60
55
ns


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