LMBD2835LT1G datasheet(1/5 Pages) LRC | Monolithic Dual Switching Diodes

1 page

LESHAN RADIO COMPANY, LTD.

1/3

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

Characteristic

Symbol

M a x

Unit

Total Device Dissipation FR– 5 Board (1)

225

T A = 25°C

Derate above 25°C

1.8

mW/°C

Thermal Resistance, Junction to Ambient

R θ JA

556

°C/W

Total Device Dissipation

P D

300

Alumina Substrate, (2) T A = 25°C

Derate above 25°C

2.4

mW/°C

Thermal Resistance, Junction to Ambient

R θ JA

417

°C/W

Junction and Storage Temperature

T J , T stg

–55 to +150

°C

DEVICE MARKING

LMBD2835LT1G = A3X;LMBD2836LT1G=A2X

ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)( EACH DIODE )

Characteristic

Symbol

Min

Ma x

Unit

OFF CHARACTERISTICS

Reverse Breakdown Voltage(I R = 100

µAdc) LMBD2835LT1

V (BR)

—

Vdc

LMBD2836LT1

—

Reverse Voltage Leakage Current

I R

nAdc

(V R = 30 Vdc)

LMBD2835LT1

—

100

(V R = 50 Vdc)

LMBD2836LT1

—

100

Diode Capacitance

C T

—

4.0

(V R = 0, f = 1.0 MHz)

Forward Voltage(I F = 10 mAdc)

V F

—

1.0

Vdc

(I F = 50 mAdc)

—

1.0

(I F = 100 mAdc)

—

1.2

Reverse Recovery Time(I F = I R = 10 mAdc, I R(REC)= 1.0mAdc) (Figure 1)

t rr

—

4.0

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

Monolithic Dual Switching Diodes

ORDERING INFORMATION

Device

Marking

Shipping

LMBD2835LT1G

A3X

3000/Tape&Reel

LMBD2835LT3G

A3X

10000/Tape&Reel

LMBD2836LT1G

A2X

3000/Tape&Reel

LMBD2836LT3G

A2X

10000/Tape&Reel

FETURE

CATHODE

ANODE

SOT– 23 (TO–236AB)

LMBD2835LT1G

LMBD2836LT1G

Rating

Symbol

Value

Unit

Peak Reverse Voltage

V RM

Vdc

D.C Reverse Voltage

LMBD2835LT1G

V R

Vdc

LMBD2836LT1G

Peak Forward Current

I FM

450

mAdc

300

Average Rectified Current

I O

150

mAdc

100

We declare that the material of product

compliance with RoHS requirements.

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