LMBT3906DW1T1G datasheet(2/8 Pages) LRC

Part #	LMBT3906DW1T1G

Description	Dual Bias Resistor Transistor

Download	8 Pages

Scroll/Zoom	100%

Manufacturer	LRC [Leshan Radio Company]

Direct Link	http://www.lrc.cn/

Logo

2 / 8 page

LESHAN RADIO COMPANY, LTD.

LMBT3906DW1T1G

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage(2)

V(BR)CEO

–40

–

Vdc

Collector–Base Breakdown Voltage

V(BR)CBO

–40

–

Vdc

Emitter–Base Breakdown Voltage

V(BR)EBO

–5.0

–

Vdc

Base Cutoff Current

IBL

–

–50

nAdc

Collector Cutoff Current

ICEX

–

–50

nAdc

ON CHARACTERISTICS (2)

DC Current Gain

(IC = –0.1 mAdc, VCE = –1.0 Vdc)

(IC = –1.0 mAdc, VCE = –1.0 Vdc)

(IC = –10 mAdc, VCE = –1.0 Vdc)

(IC = –50 mAdc, VCE = –1.0 Vdc)

(IC = –100 mAdc, VCE = –1.0 Vdc)

hFE

60

80

100

60

30

–

300

–

Collector–Emitter Saturation Voltage

(IC = –10 mAdc, IB = –1.0 mAdc)

(IC = –50 mAdc, IB = –5.0 mAdc)

VCE(sat)

–

–0.25

–0.4

Vdc

Base–Emitter Saturation Voltage

(IC = –10 mAdc, IB = –1.0 mAdc)

(IC = –50 mAdc, IB = –5.0 mAdc)

VBE(sat)

–0.65

–

–0.85

–0.95

Vdc

SMALL–SIGNAL CHARACTERISTICS

Current–Gain – Bandwidth Product

fT

250

–

MHz

Output Capacitance

Cobo

–

4.5

pF

Input Capacitance

Cibo

–

10.0

pF

2. Pulse Test: Pulse Width

≤ 300 µs; Duty Cycle ≤2.0%.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Max

Unit

Input Impedance

(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz)

hie

2.0

12

k

Ω

Voltage Feedback Ratio

(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz)

hre

0.1

10

X 10–4

Small–Signal Current Gain

(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz)

hfe

100

400

–

Output Admittance

(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz)

hoe

3.0

60

mmhos

Noise Figure

(VCE = –5.0 Vdc, IC = –100 mAdc, RS = 1.0 k Ω, f = 1.0 kHz)

NF

–

4.0

dB

SWITCHING CHARACTERISTICS

Delay Time

(VCC = –3.0 Vdc, VBE = 0.5 Vdc)

td

–

35

ns

Rise Time

(IC = –10 mAdc, IB1 = –1.0 mAdc)

tr

–

35

ns

Storage Time

(VCC = –3.0 Vdc, IC = –10 mAdc)

ts

–

225

ns

Fall Time

(IB1 = IB2 = –1.0 mAdc)

tf

–

75

ns

2/9

Similar Part No. - LMBT3906DW1T1G

Manufacturer	Part #	Datasheet	Description
Leshan Radio Company	LMBT3906DW1T1G	236Kb / 6P	Dual Bias Resistor Transistor

More results

Similar Description - LMBT3906DW1T1G

Manufacturer	Part #	Datasheet	Description
Leshan Radio Company	LMBT3906DW1T1	188Kb / 6P	Dual Bias Resistor Transistor
ON Semiconductor	NSB1706DMW5T1	49Kb / 3P	Dual Bias Resistor Transistor May, 2006 ??Rev. 3
	IMD10AMT1G	97Kb / 5P	Dual Bias Resistor Transistor April, 2012 ??Rev. 0
	IMH20T1G	23Kb / 4P	Dual Bias Resistor Transistor July, 2003 - Rev. 0
	IMD10AMT1G	62Kb / 5P	Dual Bias Resistor Transistor May, 2014 ??Rev. 1
	IMD10AMT1G	63Kb / 5P	Dual Bias Resistor Transistor May, 2017 ??Rev. 2
WILLAS ELECTRONIC CORP	MMBT3906DW1T1	349Kb / 6P	Dual Bias Resistor Transistor
ON Semiconductor	NSB1706DMW5T1G	123Kb / 3P	Dual Bias Resistor Transistor October, 2009 ??Rev. 4
ON Semiconductor	IMH20TR1G	30Kb / 2P	Dual Bias Resistor Transistor January, 2004 ??Rev. 0
Weitron Technology	MUN5111DW	379Kb / 12P	Dual Bias Resistor Transistor

More results

LMBT3906DW1T1G Datasheet(PDF) 2 Page - Leshan Radio Company

LMBT3906DW1T1G Datasheet(HTML) 2 Page - Leshan Radio Company

Similar Part No. - LMBT3906DW1T1G

Similar Description - LMBT3906DW1T1G

Html Pages

1 2 3 4 5 6 7 8

Datasheet Download

Link URL