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CM400DY-66H Datasheet(PDF) 3 Page - Powerex Power Semiconductors

Part # CM400DY-66H
Description  HIGH POWER SWITCHING USE INSULATED TYPE
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Manufacturer  POWEREX [Powerex Power Semiconductors]
Direct Link  http://www.pwrx.com
Logo POWEREX - Powerex Power Semiconductors

CM400DY-66H Datasheet(HTML) 3 Page - Powerex Power Semiconductors

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Feb. 2000
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM400DY-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
100
23
10–1
57 100 23 5 7 101 23 5 7 102
102
7
5
3
2
101
7
5
3
2
7
5
3
2
10–1
CAPACITANCE VS. VCE
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE VCE (V)
Cies
Coes
Cres
VGE = 0V, Tj = 25
°C
Cies, Coes : f = 100kHz
Cres
: f = 1MHz
OUTPUT CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER-COLLECTOR VOLTAGE VEC (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
05
4
3
2
1
102
104
7
5
3
2
103
7
5
3
2
7
5
3
2
101
Tj=25
°C
800
400
200
0
10
0
246
8
600
Tj=25
°C
VGE=13V
VGE=12V
VGE=11V
VGE=10V
VGE=9V
VGE=8V
VGE=7V
VGE=14V
VGE=15V
VGE=20V
0
8
6
4
2
0
200
400
600
800
VGE=15V
Tj = 25
°C
Tj = 125
°C
800
400
200
0
600
20
04
8
12
16
VCE=10V
Tj = 25
°C
Tj = 125
°C
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
020
16
12
8
4
10
8
6
4
2
0
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
Tj = 25
°C
IC = 400A
IC = 800A
IC = 160A


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