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EN25P10-50GI Datasheet(PDF) 1 Page - Eon Silicon Solution Inc. |
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EN25P10-50GI Datasheet(HTML) 1 Page - Eon Silicon Solution Inc. |
1 / 31 page This Data Sheet may be revised by subsequent versions ©2004 Eon Silicon Solution, Inc., www.essi.com.tw or modifications due to changes in technical specifications. 1 EN25P10 Rev. C, Issue Date: 2007/5/4 FEATURES • Single power supply operation - Full voltage range: 2.7-3.6 volt • 1 M-bit Serial Flash - 1 M-bit/128 K-byte/512 pages - 256 bytes per programmable page • High performance - 100MHz clock rate • Low power consumption - 5 mA typical active current - 1 μA typical power down current • Uniform Sector Architecture: - Four 32-Kbyte sectors • Software and Hardware Write Protection: - Write Protect all or portion of memory via software - Enable/Disable protection with WP# pin • High performance program/erase speed - Byte program time: 7µs typical - Page program time: 1.5ms typical - Sector erase time: 500 ms typical - Chip erase time: 2 Seconds typical • Minimum 100K endurance cycle • Package Options - 8 pins SOP 150mil body width - 8 contact VDFN - All Pb-free packages are RoHS compliant • Commercial and industrial temperature Range GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow either single Sector at a time or full chip erase operation. The EN25P10 can be configured to protect part of the memory as the software protected mode. The device can sustain a minimum of 100K program/erase cycles on each sector. EN25P10 1 Mbit Uniform Sector, Serial Flash Memory |
Similar Part No. - EN25P10-50GI |
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Similar Description - EN25P10-50GI |
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