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EN25P10-50GI Datasheet(PDF) 1 Page - Eon Silicon Solution Inc.

Part # EN25P10-50GI
Description  1 Mbit Uniform Sector, Serial Flash Memory
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Manufacturer  EON [Eon Silicon Solution Inc.]
Direct Link  http://www.essi.com.tw
Logo EON - Eon Silicon Solution Inc.

EN25P10-50GI Datasheet(HTML) 1 Page - Eon Silicon Solution Inc.

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This Data Sheet may be revised by subsequent versions
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
1
EN25P10
Rev. C, Issue Date: 2007/5/4
FEATURES
• Single power supply operation
- Full voltage range: 2.7-3.6 volt
• 1 M-bit Serial Flash
- 1 M-bit/128 K-byte/512 pages
- 256 bytes per programmable page
• High performance
- 100MHz clock rate
• Low power consumption
- 5 mA typical active current
- 1
μA typical power down current
• Uniform Sector Architecture:
- Four 32-Kbyte sectors
• Software and Hardware Write Protection:
- Write Protect all or portion of memory via
software
- Enable/Disable protection with WP# pin
• High performance program/erase speed
- Byte program time: 7µs typical
- Page program time: 1.5ms typical
- Sector erase time: 500 ms typical
- Chip erase time: 2 Seconds typical
• Minimum 100K endurance cycle
• Package Options
- 8 pins SOP 150mil body width
- 8 contact VDFN
- All Pb-free packages are RoHS compliant
• Commercial and industrial temperature
Range
GENERAL DESCRIPTION
The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection
mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to
256 bytes at a time, using the Page Program instruction.
The EN25P10 is designed to allow either single Sector at a time or full chip erase operation. The
EN25P10 can be configured to protect part of the memory as the software protected mode. The
device can sustain a minimum of 100K program/erase cycles on each sector.
EN25P10
1 Mbit Uniform Sector, Serial Flash Memory


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