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EN29LV160B-70TP Datasheet(PDF) 10 Page - Eon Silicon Solution Inc. |
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EN29LV160B-70TP Datasheet(HTML) 10 Page - Eon Silicon Solution Inc. |
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10 / 45 page  This Data Sheet may be revised by subsequent versions ©2003 Eon Silicon Solution, Inc., www.essi.com.tw or modifications due to changes in technical specifications. 10 EN29LV160 Rev. A, Issue Date: 2004/03/30 then be device-independent, JEDEC ID- independent, and forward- and backward- compatible for the specified flash device families. Flash vendirs can standardize their existing interfaces for long-term compatibility. This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address 55h in word mode (or address AAh in byte mode), any time the device is ready to read array data. The system can read CFI information at the addresses given in Tables 5-8. In word mode, the upper address bits (A7–MSB) must be all zeros. To terminate reading CFI data, the system must write the reset command. The system can also write the CFI query command when the device is in the autoselect mode. The device enters the CFI query mode and the system can read CFI data at the addresses given in Tables 5–8. The system must write the reset command to return the device to the autoselect mode. Table 5. CFI Query Identification String Adresses (Word Mode) Adresses (Byte Mode) Data Description 10h 11h 12h 20h 22h 24h 0051h 0052h 0059h Query Unique ASCII string “QRY” 13h 14h 26h 28h 0002h 0000h Primary OEM Command Set 15h 16h 2Ah 2Ch 0040h 0000h Address for Primary Extended Table 17h 18h 2Eh 30h 0000h 0000h Alternate OEM Command set (00h = none exists) 19h 1Ah 32h 34h 0000h 0000h Address for Alternate OEM Extended Table (00h = none exists Table 6. System Interface String Addresses (Word Mode) Addresses (Byte Mode) Data Description 1Bh 36h 0027h Vcc Min (write/erase) D7-D4: volt, D3 –D0: 100 millivolt 1Ch 38h 0036h Vcc Max (write/erase) D7-D4: volt, D3 –D0: 100 millivolt 1Dh 3Ah 0000h Vpp Min. voltage (00h = no Vpp pin present) 1Eh 3Ch 0000h Vpp Max. voltage (00h = no Vpp pin present) 1Fh 3Eh 0004h Typical timeout per single byte/word write 2^N µs 20h 40h 0000h Typical timeout for Min, size buffer write 2^N µs (00h = not supported) 21h 42h 000Ah Typical timeout per individual block erase 2^N ms 22h 44h 0000h Typical timeout for full chip erase 2^N ms (00h = not supported) 23h 46h 0005h Max. timeout for byte/word write 2^N times typical 24h 48h 0000h Max. timeout for buffer write 2^N times typical 25h 4Ah 0004h Max. timeout per individual block erase 2^N times typical 26h 4Ch 0000h Max timeout for full chip erase 2^N times typical (00h = not supported) Table 7. Device Geometry Definition Addresses (Word mode) Addresses (Byte Mode) Data Description 27h 4Eh 0015h Device Size = 2^N byte |
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