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1SMB3EZ47 Datasheet(PDF) 3 Page - Pan Jit International Inc. |
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1SMB3EZ47 Datasheet(HTML) 3 Page - Pan Jit International Inc. |
3 / 4 page PAGE . 3 REV.0-JUN.15.2005 1SMB3EZ6.8~1SMB3EZ100 APPLICATION NOTE: Since t he actual voltage available from a g iven zener diode is temperature dependent, i t i s n ecessary to determinejunction temperature under any s et of operating conditions in order to calculate i ts value. The f ollowing procedure i s r ecommended: Lead Te mperature, T , should be determined from: T= L A P + T L i s t he lead-to-ambient thermal r esistance ( C/W) and P d i s t he power dissipation. The v alue for L will vary and depends on the device m ounting method. L i s g enerally 30-40 C /W for t he various clips and t ie points i n c ommon u se and for printed circuit board wiring. The t emperature o f t he lead can also b e m easured using a t hermocouple placed on the l ead as close a s p ossible to the t ie poi n The t hermal m ass c onnected t o t he tie point is normally large enough so that it will not s ignificantly respond to heat surges generated in the diode as a r esult of pulsed operation once s teady-state c onditions are achieved. Using the m easured value of TL, t he junction temperature m ay be determined by: T= T + T T i s t he increase i n j unction temperature above t he lead temperature and may b e f ound from Figure 2 f or a t rain of power puls or from Figure 1 0 f or dc power. T= J P For w orst-case design, using expected l imits o f I , l imits o f P and the e xtremes o f T ( T ) m ay be estimated. Changes in volta V , can t hen be found from: V= V T V , the z ener voltage temperature c oefficient, i s f ound from Figures 5 a nd 6. Under high power-pulse operation, the z ener voltage will vary with time and may a lso b e a ff ected s ignificantly by the z ener resis For b est r egulation, keep current excursions as low a s p ossible. Data o f F igure 2 s hould not be used to compute s urge capa-bility. Surge l imitations are given in Figure 3 . T hey are lower than w be expected b y c onsidering only junction temperature, as current crowding effects c ause t emperatures to be extremely high in s spots r esulting in device degradation should the l imits o f F igure 3 b e e xceeded. L LD A A A A JL JL JL Z q q q q D D Dq D Dq D q O O JL L D ZD J J Z ZJ |
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