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EN29LV800AT-70BIP Datasheet(PDF) 1 Page - Eon Silicon Solution Inc. |
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EN29LV800AT-70BIP Datasheet(HTML) 1 Page - Eon Silicon Solution Inc. |
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1 / 41 page  This Data Sheet may be revised by subsequent versions ©2004 Eon Silicon Solution, Inc., www.essi.com.tw or modifications due to changes in technical specifications. 1 EN29LV800A EN29LV800A 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only FEATURES • Single power supply operation - Full voltage range: 2.7-3.6 volt read and write operations for battery-powered applications. - Regulated voltage range: 3.0-3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors. • Manufactured on 0.18 µm triple-metal double poly triple-well CMOS Flash Technology • High performance - Access times as fast as 55 ns • Low power consumption (typical values at 5 MHz) - 7 mA typical active read current - 15 mA typical program/erase current - 1 µA typical standby current (standard access time to active mode) • Flexible Sector Architecture: - One 16-Kbyte, two 8-Kbyte, one 32-Kbyte, and fifteen 64-Kbyte sectors (byte mode) - One 8-Kword, two 4-Kword, one 16-Kword and fifteen 32-Kword sectors (word mode) • Sector protection: - Hardware locking of sectors to prevent program or erase operations within individual sectors Additionally, temporary Sector Unprotect allows code changes in previously locked sectors. • High performance program/erase speed - Byte/Word program time: 8µs typical - Sector erase time: 500ms typical • JEDEC Standard Embedded Erase and Program Algorithms • JEDEC standard DATA# polling and toggle bits feature • Single Sector and Chip Erase • Sector Unprotect Mode • Erase Suspend / Resume modes: Read or program another Sector during Erase Suspend Mode • Low Vcc write inhibit < 2.5V • Minimum 1,000K endurance cycle • Package Options - 48-pin TSOP (Type 1) - 48-ball 6mm x 8mm FBGA • Commercial and industrial temperature Range GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 55ns to eliminate the need for WAIT statements in high-performance microprocessor systems. The EN29LV800A has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#) controls, which eliminate bus contention issues. This device is designed to allow either single Sector or full chip erase operation, where each sector can be individually protected against program/erase operations or temporarily unprotected to erase or program. The device can sustain a minimum of 1,000K program/erase cycles on each sector. Rev. C, Issue Date: 2005/01/10 |
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