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EN29SL400T-70TC Datasheet(PDF) 11 Page - Eon Silicon Solution Inc.

Part # EN29SL400T-70TC
Description  4 Megabit (512K x 8-bit / 256K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 1.8 Volt-only
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Manufacturer  EON [Eon Silicon Solution Inc.]
Direct Link  http://www.essi.com.tw
Logo EON - Eon Silicon Solution Inc.

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This Data Sheet may be revised by subsequent versions
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
11
EN29SL400
Rev. A, Issue Date: 2006/04/14
COMMAND DEFINITIONS
The operations of EN29SL400 are selected by one or more commands written into the command
register to perform Read/Reset Memory, Read ID, Read Sector Protection, Program, Sector Erase,
Chip Erase, Erase Suspend and Erase Resume. Commands are made up of data sequences
written at specific addresses via the command register. The sequences for the specified operation
are defined in the Command Definitions table (Table 5). Incorrect addresses, incorrect data values
or improper sequences will reset the device to Read Mode.
Table 5. EN29SL400 Command Definitions
Bus Cycles
1
st
Cycle
2
nd
Cycle
3
rd
Cycle
4
th
Cycle
5
th
Cycle
6
th
Cycle
Command
Sequence
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Add
r
Data
Addr
Data
Read
1
RA
RD
Reset
1
xxx
F0
000
7F
Word
555
2AA
555
100
1C
000
7F
Manufacturer
ID
Byte
4
AAA
AA
555
55
AAA
90
200
1C
Word
555
2AA
555
X01
2270
Device ID
Top Boot
Byte
4
AAA
AA
555
55
AAA
90
X02
70
Word
555
2AA
555
X01
22F1
Device ID
Bottom Boot
Byte
4
AAA
AA
555
55
AAA
90
X02
F1
XX00
Word
555
2AA
555
(SA)
X02
XX01
00
Sector Protect
Verify
Byte
4
AAA
AA
555
55
AAA
90
(SA)
X04
01
Word
555
2AA
555
Program
Byte
4
AAA
AA
555
55
AAA
A0
PA
PD
Word
555
2AA
555
555
2AA
555
Chip Erase
Byte
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
AAA
10
Word
555
2AA
555
555
2AA
Sector Erase
Byte
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
SA
30
Erase Suspend
1
xxx
B0
Erase Resume
1
xxx
30
Address and Data values indicated in hex
RA = Read Address: address of the memory location to be read. This is a read cycle.
RD = Read Data: data read from location RA during Read operation. This is a read cycle.
PA = Program Address: address of the memory location to be programmed. X = Don’t-Care
PD = Program Data: data to be programmed at location PA
SA = Sector Address: address of the Sector to be erased or verified. Address bits A17-A12 uniquely select any Sector.
Reading Array Data
The device is automatically set to reading array data after power up. No commands are required to
retrieve data. The device is also ready to read array data after completing an Embedded Program
or Embedded Erase algorithm.
Following an Erase Suspend command, Erase Suspend mode is entered. The system can read
array data using the standard read timings, with the only difference in that if it reads at an address
within erase suspended sectors, the device outputs status data. After completing a programming
operation in the Erase Suspend mode, the system may once again read array data with the same
exception.


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