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RT8009 Datasheet(PDF) 5 Page - Richtek Technology Corporation |
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RT8009 Datasheet(HTML) 5 Page - Richtek Technology Corporation |
5 / 13 page RT8009 5 DS8009-03 March 2007 www.richtek.com Parameter Symbol Test Conditions Min Typ Max Units Output Voltage Accuracy Adjustable ΔVOUT VIN = VOUT + ΔV to 5.5V (Note 5) 0A < IOUT < 600mA −3 -- +3 % FB Input Current IFB VFB = VIN −50 -- 50 nA RDS(ON) of P-Channel MOSFET RDS(ON)_P IOUT = 200mA VIN = 3.6V -- 0.3 0.65 Ω VIN = 2.5V -- 0.4 0.80 RDS(ON) of N-Channel MOSFET RDS(ON)_N IOUT = 200mA VIN = 3.6V -- 0.25 0.55 Ω VIN = 2.5V -- 0.35 0.65 P-Channel Current Limit ILIM_P VIN = 2.5V to 5.5 V 1 -- 1.8 A EN High-Level Input Voltage VEN_H VIN = 2.5V to 5.5V 1.5 -- -- V EN Low-Level Input Voltage VEN_L VIN = 2.5V to 5.5V -- -- 0.4 V Undervoltage Lock Out threshold -- 1.8 -- V Hysteresis -- 0.1 -- V Oscillator Frequency fOSC VIN = 3.6V, IOUT = 100mA 0.8 1.25 1.85 MHz Thermal Shutdown Temperature TSD -- 160 -- °C Min. On Time -- 50 -- ns Max. Duty Cycle 100 -- -- % LX Leakage Current VIN = 3.6V, VLX = 0V or VLX = 3.6V -1 -- 1 μA Note 1. Stresses listed as the above “Absolute Maximum Ratings” may cause permanent damage to the device. These are for stress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may remain possibility to affect device reliability. Note 2. Devices are ESD sensitive. Handling precaution recommended. Note 3. The device is not guaranteed to function outside its operating conditions. Note 4. θJA is measured in the natural convection at TA = 25°C on a low effective thermal conductivity test board of JEDEC 51-3 thermal measurement standard. Note 5. ΔV = IOUT x RDS(ON)_P |
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