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RT8010A-33PQW Datasheet(PDF) 5 Page - Richtek Technology Corporation |
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RT8010A-33PQW Datasheet(HTML) 5 Page - Richtek Technology Corporation |
5 / 15 page RT8010/A 5 DS8010/A-02 March 2007 www.richtek.com Parameter Symbol Test Conditions Min Typ Max Units ΔVOUT VIN = VOUT + ΔV to 5.5V (Note 5) −3 -- +3 % Output Voltage Accuracy Fix ΔVOUT VIN = VOUT + ΔV to 5.5V (Note 5) −3 -- +3 % Output Voltage Accuracy Adjustable ΔVOUT VIN = VOUT + ΔV to 5.5V (Note 5) 0A < IOUT < 1A −3 -- +3 % FB Input Current IFB VFB = VIN −50 -- 50 nA VIN = 3.6V -- 0.28 -- PMOSFET RON RDS(ON)_P IOUT = 200mA VIN = 2.5V -- 0.38 -- Ω VIN = 3.6V -- 0.25 -- NMOSFET RON RDS(ON)_N IOUT = 200mA VIN = 2.5V -- 0.35 -- Ω P-Channel Current Limit ILIM_P VIN = 2.5V to 5.5 V 1.4 1.5 -- A EN High-Level Input Voltage VEN_H VIN = 2.5V to 5.5V 1.5 -- -- EN Low-Level Input Voltage VEN_L VIN = 2.5V to 5.5V -- -- 0.4 V Under Voltage Lock Out threshold UVLO -- 1.8 -- V Hysteresis -- 0.1 -- V Oscillator Frequency fOSC VIN = 3.6V, IOUT = 100mA 1.2 1.5 1.8 MHz Thermal Shutdown Temperature TSD -- 160 -- °C Max. Duty Cycle 100 -- -- % LX Leakage Current VIN = 3.6V, VLX = 0V or VLX = 3.6V −1 -- 1 μA Note 1. Stresses listed as the above “Absolute Maximum Ratings” may cause permanent damage to the device. These are for stress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may remain possibility to affect device reliability. Note 2. Devices are ESD sensitive. Handling precaution recommended. Note 3. The device is not guaranteed to function outside its operating conditions. Note 4. θJA is measured in the natural convection at TA = 25°C on a high effective four layers thermal conductivity test board of JEDEC 51-7 thermal measurement standard. The case point of θJC is on the expose pad for the QFN package. Note 5. ΔV = IOUT x PRDS(ON) Note 6. Guarantee by design. |
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