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EM63A165TS-7G Datasheet(PDF) 3 Page - Etron Technology, Inc.

Part # EM63A165TS-7G
Description  16Mega x 16 Synchronous DRAM (SDRAM)
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Manufacturer  ETRON [Etron Technology, Inc.]
Direct Link  http://www.etron.com
Logo ETRON - Etron Technology, Inc.

EM63A165TS-7G Datasheet(HTML) 3 Page - Etron Technology, Inc.

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EtronTech
EM63A165
3
Rev 1.1 Apr. 2007
Pin Descriptions
Table 1. Pin Details of EM63A165
Symbol
Type
Description
CLK
Input
Clock:
CLK is driven by the system clock. All SDRAM input signals are sampled
on the positive edge of CLK. CLK also increments the internal burst counter and
controls the output registers.
CKE
Input
Clock Enable:
CKE activates(HIGH) and deactivates(LOW) the CLK signal. If
CKE goes low synchronously with clock(set-up and hold time same as other
inputs), the internal clock is suspended from the next clock cycle and the state of
output and burst address is frozen as long as the CKE remains low. When all
banks are in the idle state, deactivating the clock controls the entry to the Power
Down and Self Refresh modes. CKE is synchronous except after the device
enters Power Down and Self Refresh modes, where CKE becomes
asynchronous until exiting the same mode. The input buffers, including CLK, are
disabled during Power Down and Self Refresh modes, providing low standby
power.
Bank Select:
BA0,BA1 input select the bank for operation.
BA1
BA0
Select Bank
0
0
BANK #A
0
1
BANK #B
1
0
BANK #C
BA0,BA1
Input
1
1
BANK #D
A0-A12
Input
Address Inputs:
A0-A11 are sampled during the BankActivate command (row
address A0-A11) and Read/Write command (column address A0-A8 with A10
defining Auto Precharge) to select one location out of the 4M available in the
respective bank. During a Precharge command, A10 is sampled to determine if
all banks are to be precharged (A10 = HIGH). The address inputs also provide
the op-code during a Mode Register Set command.
CS#
Input
Chip Select:
CS# enables (sampled LOW) and disables (sampled HIGH) the
command decoder. All commands are masked when CS# is sampled HIGH. CS#
provides for external bank selection on systems with multiple banks. It is
considered part of the command code.
RAS#
Input
Row Address Strobe:
The RAS# signal defines the operation commands in
conjunction with the CAS# and WE# signals and is latched at the positive edges
of CLK. When RAS# and CS# are asserted "LOW" and CAS# is asserted
"HIGH," either the BankActivate command or the Precharge command is
selected by the WE# signal. When the WE# is asserted "HIGH," the BankActivate
command is selected and the bank designated by BS is turned on to the active
state. When the WE# is asserted "LOW," the Precharge command is selected
and the bank designated by BS is switched to the idle state after the precharge
operation.
CAS#
Input
Column Address Strobe:
The CAS# signal defines the operation commands in
conjunction with the RAS# and WE# signals and is latched at the positive edges
of CLK. When RAS# is held "HIGH" and CS# is asserted "LOW," the column
access is started by asserting CAS# "LOW." Then, the Read or Write command
is selected by asserting WE# "LOW" or "HIGH."


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