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2N5432 Datasheet(PDF) 4 Page - Vishay Siliconix |
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2N5432 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 6 page 2N5432/5433/5434 Vishay Siliconix www.vishay.com 7-4 Document Number: 70245 S-04028—Rev. F, 04-Jun-01 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 50 20 10 0 1 10 100 40 30 On-Resistance vs. Drain Current ID – Drain Current (mA) TA = 25_C VGS(off) = –2 V –4 V –8 V 40 –55 25 125 32 24 16 8 0 –15 85 –35 5 45 65 105 On-Resistance vs. Temperature TA – Temperature (_C) VGS(off) = –2 V –4 V –8 V ID = 10 mA rDS changes X 0.7%/ _C 100 0 –12 –16 –8 –4 –20 40 20 0 80 60 Capacitance vs. Gate-Source Voltage VGS – Gate-Source Voltage (V) VDS = 0 V f = 1 MHz Ciss Crss Gate Leakage Current 048 12 1 pA 10 pA 100 pA 1 nA 10 nA 16 20 100 nA VDG – Drain-Gate Voltage (V) IGSS @ 125 _C TA = 125_C TA = 25_C 5 mA IGSS @ 25 _C 10 mA 1 mA 100 10 1 10 100 1 k 100 k 10 k Noise Voltage vs. Frequency f – Frequency (Hz) VDS = 5 V ID = 10 mA ID = 40 mA 100 10 1 1 10 100 Transconductance vs. Drain Current ID – Drain Current (mA) VDS = 5 V f = 1 kHz TA = –55_C 125 _C VGS(off) = –4 V ID = 10 mA 5 mA 1 mA 25 _C |
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