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CY7C199B-20VI Datasheet(PDF) 1 Page - Cypress Semiconductor

Part # CY7C199B-20VI
Description  32K x 8 Static RAM
Download  15 Pages
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C199B-20VI Datasheet(HTML) 1 Page - Cypress Semiconductor

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PRELIMINARY
32K x 8 Static RAM
CY7C199B
Cypress Semiconductor Corporation
3901 North First Street
San Jose
CA 95134
408-943-2600
June 13, 2000
Features
• High speed
—10 ns
• Fast tDOE
• CMOS for optimum speed/power
• Low active power
— 495 mW (max, 10 ns “L” version)
• Low standby power
— 0.275 mW (max, “L” version)
• 2V data retention (“L” version only)
• Easy memory expansion with CE and OE features
• TTL-compatible inputs and outputs
• Automatic power-down when deselected
Functional Description
The CY7C199B is a high-performance CMOS static RAM or-
ganized as 32,768 words by 8 bits. Easy memory expansion
is provided by an active LOW Chip Enable (CE) and active
LOW Output Enable (OE) and three-state drivers. This device
has an automatic power-down feature, reducing the power
consumption by 81% when deselected. The CY7C199B is in
the standard 300-mil-wide DIP, SOJ, and LCC packages.
An active LOW Write Enable signal (WE) controls the writ-
ing/reading operation of the memory. When CE and WE inputs
are both LOW, data on the eight data input/output pins (I/O0
through I/O7) is written into the memory location addressed by
the address present on the address pins (A0 through A14).
Reading the device is accomplished by selecting the device
and enabling the outputs, CE and OE active LOW, while WE
remains inactive or HIGH. Under these conditions, the con-
tents of the location addressed by the information on address
pins are present on the eight data input/output pins.
The input/output pins remain in a high-impedance state unless
the chip is selected, outputs are enabled, and Write Enable
(WE) is HIGH. A die coat is used to improve alpha immunity.
Selection Guide
199B-8
199B-10
199B-12
199B-15
199B-20
199B-25
199B-35
199B-45
Maximum Access Time (ns)
810
12
15
20
25
35
45
Maximum Operating
Current (mA)
120
110
160
155
150
150
140
140
L
90
90
90
90
80
70
Maximum CMOS
Standby Current (mA)
0.5
0.5
10
10
10
10
10
10
L
0.05
0.05
0.05
0.05
0.05
0.05
Shaded area contains advance information.
Logic Block Diagram
Pin Configurations
A1
A2
A3
A4
A5
A6
A7
A8
COLUMN
DECODER
INPUT BUFFER
POWER
DOWN
WE
OE
I/O0
CE
I/O1
I/O2
I/O3
1
2
3
4
5
6
7
8
9
10
11
14
15
16
20
19
18
17
21
24
23
22
Top View
DIP / SOJ / SOIC
12
13
25
28
27
26
GND
A6
A7
A8
A9
A10
A11
A12
A13
WE
VCC
A4
A3
A2
A1
I/O7
I/O6
I/O5
I/O4
A14
A5
I/O0
I/O1
I/O2
CE
OE
A0
I/O3
1024 x 32 x 8
ARRAY
I/O7
I/O6
I/O5
I/O4
A9
A0
28
4
5
6
7
8
9
10
32 1
27
1314151617
26
25
24
23
22
21
20
11
12
19
18
A8
A9
A10
A11
A12
A13
A14
CE
A3
A2
A1
A0
I/O1
I/O7
I/O6
A4
OE
I/O0
Top View
LCC
C199B–1
C199B–2
C199–3
22
23
24
25
26
27
28
1
2
5
10
11
15
14
13
12
16
19
18
17
3
4
20
21
7
6
8
9
OE
A 1
A 2
A 3
A 4
WE
V CC
A 5
A 6
A 7
A 8
A 9
A 0
CE
I/O 7
I/O 6
I/O 5
GND
I/O 2
I/O 1
I/O 4
I/O 0
A 14
A 10
A 11
A 13
A 12
C199–4
I/O 3
TSOP I
Top View
(not to scale)


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