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HMC-ALH369 Datasheet(PDF) 3 Page - Hittite Microwave Corporation |
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HMC-ALH369 Datasheet(HTML) 3 Page - Hittite Microwave Corporation |
3 / 3 page 0 - 32 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH369 v00.1007 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz Outline Drawing Absolute Maximum Ratings Drain Bias Voltage +5.5 Vdc RF Input Power (24 - 32 GHz) 5 dBm RF Input Power (32 - 40 GHz) -1 dBm Channel Temperature 180 °C Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002” |
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