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TLC2801ZP Datasheet(PDF) 1 Page - Texas Instruments |
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TLC2801ZP Datasheet(HTML) 1 Page - Texas Instruments |
1 / 13 page TLC2801Z, TLC2801Y Advanced LinCMOS ™ LOW-NOISE PRECISION OPERATIONAL AMPLIFIERS SLOS116B – JULY 1982 – REVISED SEPTEMBER 1996 3–1 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 D Low Input Noise Voltage: 35 nV/ √Hz Max at f = 10 Hz 15 nV/ √Hz Max at f = 1 kHz D Low Input Offset Voltage: 500 µV Max at TA = 25°C 1.5 mV Max at TA = Full Range D Excellent Offset Voltage Stability With Temperature ...4 µV/°C Typ D Low Input Bias Current: 1 pA Typ at TA = 25°C 250 pA Typ at TA = 150°C D Specified for Both Single-Supply and Split-Supply Operation D Common-Mode Input Voltage Range Includes the Negative Rail description The TLC2801 is a precision, low-noise operational amplifier manufactured using Texas Instruments Advanced LinCMOS ™ process. The TLC2801 combines the noise performance of the lowest-noise JFET amplifiers with the dc precision available previously only in bipolar amplifiers. The Advanced LinCMOS ™ process uses silicon-gate technology to obtain input offset voltage stability with temperature and time that far exceeds that obtainable using metal-gate technology. In addition, this technology makes possible input impedance levels that meet or exceed levels offered by top-gate JFET and expensive dielectric-isolated devices. The combination of excellent dc and noise performance with a common-mode input voltage range that includes the negative rail makes the TLC2801 an ideal choice for high-impedance, low-level signal conditioning applications in either single-supply or split-supply configurations. The device inputs and output are designed to withstand – 100-mA surge currents without sustaining latch-up. In addition, internal ESD- protection circuits prevent functional failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in degradation of the device parametric performance. The TLC2801 is characterized for operation over the temperature range of – 40 °C to 150°C. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. Advanced LinCMOS is a trademark of Texas Instruments Incorporated. Copyright © 1996, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. 110 100 90 80 120 130 LARGE-SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION vs FREE-AIR TEMPERATURE 0 25 50 75 100 125 150 TA – Free-Air Temperature – °C 1 2 3 4 8 7 6 5 NC 1IN – 1IN + VDD–/GND NC VDD+ OUT NC D OR P PACKAGE (TOP VIEW) NC – No internal connection VDD ± = ±5 V, RL = 10 kΩ –50 – 25 VDD ± = ±5 V, RL = 500 kΩ |
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