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IRFB23N15DPBF Datasheet(PDF) 7 Page - International Rectifier |
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IRFB23N15DPBF Datasheet(HTML) 7 Page - International Rectifier |
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7 / 12 page  IRFB/IRFS/IRFSL23N15DPbF www.irf.com 7 P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period + - + + + - - - Fig 14. For N-Channel HEXFET® Power MOSFETs * VGS = 5V for Logic Level Devices Peak Diode Recovery dv/dt Test Circuit RG VDD • dv/dt controlled by RG • Driver same type as D.U.T. • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * |
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