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HIGH SPEED SILICON SWITCHING DIODES AXIAL LEAD 1N4148, 1N4448 DO-35, 500mW DESCRIPTION General purpose ,Industrial, Military and space applications. Hermetically sealed glass with a stud on either side of the glass passivated chip provides excellent stability. Extremely low leakage & very high reliability ABSOLUTE MAXIMUM RATINGS( TA=25 deg C unless otherwise specified) DESCRIPTION SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 100 V Reverse Voltage (Continuous) VR 75 V Average Forward Current IF(AV) 150 mA Forward Current (DC) IF 200 mA Repetitive Peak Forward Current IFRM 450 mA Non Repetitive Peak Surge Current tp=1usec IFSM 2000 mA tp=1sec IFSM 500 mA Power Dissipation PTA 500 mW Derating Factor 2.85 mW/deg C Operating & Storage Junction Temperature Tj, Tstg -65 to +200 deg C Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Forward Voltage VF IF=5mA 1N4448 0.62 - 0.72 V IF=10mA 1N4148 - - 1.0 V IF=100mA 1N4448 - - 1.0 V Reverse Current IR VR=20V - - 25 nA VR=75V - - 5.0 uA VR=20V, Tj=150 deg C - - 50 uA VR=75V, Tj=150 deg C - - 100 uA Reverse Breakdown Voltage VBR IR=100uA 100 - - V IR=5uA 75 - - V DYNAMIC CHARACTERISTICS Diode Capacitance Cd VR=0V, f=1MHz - - 4.0 pF Forward Recovery Voltage Vfr IF=50mA, tr=20ns - - 2.5 V Reverse Recovery Time trr IF=10mA, to IR=60mA - - 4.0 ns RL=100ohms Measured @ IR=1mA Transys Electronics LI M ITE D |
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