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2003-REV 090
TIWIN Semiconductor
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22
T68 K/S/R 1M
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
ILI
Input Leakage Current
VIN = VSS to VCC
-1
-
1
µA
ILO
Output Leakage Current
/CE1=VIH CE2=VIL or /OE=VIH
or /WE=VIL, VIO=VSS to VCC
-1
-
1
µA
T68K1M
-
3
(1)
6
T68S1M
-
3
(1)
6
ICC1
T68R1M
/CE1
≤0.2V, CE2≥VCC-0.2V,
VIN
≤0.2V or VIN≥VCC-0.2V
Cycle time = 1
µs, 100%duty,
IIO=0mA
-
2
(1)
4
mA
T68K1M
-
15
(1)
20
T68S1M
-
15
(1)
20
ICC2
Average Operating Current
T68R1M
/CE1=VIL, CE2=VIH, VIN=VIH or
VIN=VIL,
Cycle time = min, 100% duty,
IIO=0mA
-
10
(1)
15
mA
T68K1M
IOL = 2.0mA
-
-
0.4
T68S1M
IOL = 0.5mA
-
-
0.4
VOL
Output Low Voltage
T68R1M IOL = 0.2mA
-
-
0.4
V
T68K1M
IOH = -1.0mA
2.2
-
-
T68S1M
IOH = -0.5mA
2.0
-
-
VOH
Output High Voltage
T68R1M IOH = -0.1mA
1.4
-
-
V
T68K1M
-
-
0.2
T68S1M
-
-
0.2
ISB
TTL Standby Current
T68R1M
/CE1=VIH or CE2= VIL,
other inputs = VIH or VIL
-
-
0.2
mA
T68K1M
-
1.0
(1)
3
T68S1M
-
1.0
(1)
3
ISB1
CMOS Standby Current
T68R1M
/CE1
≥VCC-0.2V or
CE2
≤VSS+0.2V ,
other inputs = 0 to VCC
-
0.8
(1)
2
µA
Note: 1. Ta=25
o
C, VCC=3.0V (K), VCC=2.5V (S), and VCC=1.8V (R), not 100% tested.
¢ DC ELECTRICAL CHARACTERISTICS