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BAW56 Datasheet(PDF) 2 Page - TRANSYS Electronics Limited |
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BAW56 Datasheet(HTML) 2 Page - TRANSYS Electronics Limited |
2 / 2 page Forward current (d.c.) IF max. 215 mA Repetitive peak forward current IFRM max. 450 mA Non–repetitive peaK forward current (per crystal} t = 1 µsIFSM max. 4 A t = 1 ms IFSM max. 1 A t = 1 s IFSM max. 0,5 A Storage temperature range Tstg –55 to +150 °C Junction temperature Tj max. 150 °C THERMAL RESISTANCE From junction to ambient Rthj–a = 500 K/W CHARACTERISTICS (per diode) (at TA = 25°C unless otherwise specified) Tj = 25 °C unless otherwise specified Forward voltage IF = 1 mA VF < 715 mV IF = 10 mA VF < 855 mV IF = 50 mA VF < 1000 mV IF = 150 mA VF < 1250 mV Reverse current VR = 25V; Tj = 150 °C IR <30 µA VR = 75 V IR < 1,0 µA VR = 75V; Tj = 150 °C IR <50 µA Diode capacitance VR = 0; f = 1 MHz Cd < 2,0 pF Forward recovery voltage when switched to IF = 10mA; tr = 20ns Vfr < 1,75 V BAW56 |
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