BU508DF datasheet(1/2 Pages) TEL

Part #	BU508DF

Description	NPN POWER TRANSISTORS

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Manufacturer	TEL [TRANSYS Electronics Limited]

Direct Link	http://www.transyselectronics.com

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NPN POWER TRANSISTORS

BU508F, BU508AF,

BU508DF

TO- 3P Fully Isolated

Plastic Package

Fast Switching, High Voltage Devices for use in Horizontal Deflection Circuits of Colour TV

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

UNIT

Collector -Emitter Voltage

VCES

V

Collector -Emitter Voltage

VCEO

V

Emitter Base Voltage

VEBO

V

Collector Current

IC

A

Collector Peak Current

ICM

Total Power Dissipation upto Ta=25º C

Ptot

W

Tc=25º C

Storage Temperature Range

Tstg

ºC

Max Operating Junction Temperature

Tj

ºC

THERMAL RESISTANCE

Thermal Resistance Junction - Case

Rth (j-c)

ºC/W

ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise)

.

DESCRIPTION

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector Cut off Current

ICES

VCE=VCES, VBE=0

1.0

mA

Collector Emitter Sustaining Voltage

VCEO (sus)*

IB =0, IC=100mA

700

V

Emitter Base Voltage

VEBO

IE=10mA, IC =0

5.0

V

BU508F, AF

Emitter Cut-off Current

IEBO

VEB=5V, IC=0

300

mA

BU508DF

DC Current Gain

hFE

IC=4.5A, VCE=5V

2.25

Diode forward Voltage

VF

IF=4.0A

2.0

V

BU508DF

Collector Emitter Saturation Voltage

VCE(sat) *

IC=4.5A, IB=2.0A

1.0

V

BU508AF, DF

IC=4.5A, IB=2.0A

5.0

V

BU508F

Base Emitter Saturation Voltage

VBE(sat) *

IC=4.5A, IB=2.0A

1.5

V

SWITCHING TIME

Storage Time

ts

IC=4.5A,hFE=2.5,VCC=140V

7.0

µs

Fall Time

tf

LC=0.9mH, LB=3µH

0.5

µs

* Pulse test: Pulse Duration <300

µµs , Duty cycle < 1.5%.

8

15

34

60

- 65 to +150

150

2.08

VALUE

1500

700

5

B

C

E

Transys

Electronics

LI M ITE D

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