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MMBD914LT1 Datasheet(PDF) 1 Page - TRANSYS Electronics Limited |
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MMBD914LT1 Datasheet(HTML) 1 Page - TRANSYS Electronics Limited |
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1 / 1 page Mar ki ng 5D 2. 4 1. 3 SOT-23 Plastic-Encapsulated Diodes MMBD914LT1 SWITCHING DIODE FEATURES Power dissipation PD: 225 mW (Tamb=25 ℃) Forward Current IF: 200 mA Reverse Voltage VR: 75 V Operating and storage junction temperature range TJ, Tstg: -55 ℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Reverse breakdown voltage V(BR) IR= 100 µA 75 V Reverse voltage leakage current IR VR=75V 2.5 µA Forward voltage VF IF=1mA IF=10mA IF=50mA IF=150mA 715 855 1000 1250 mV Diode capacitance CD VR=0V, f=1MHz 20 pF Reverse recovery time t r r IF=IR=10mA VR=5V RC=100Ω 4 nS Unit: mm SOT-23 Transys Electronics LI M ITE D |
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