FEATURES

• VERY LOW NOISE FIGURE:

0.40 dB Typical at 12 GHz

• HIGH ASSOCIATED GAIN:

12.5 dB Typical at 12 GHz

• LOW COST METAL CERAMIC PACKAGE

• TAPE & REEL PACKAGING OPTION AVAILABLE

ULTRA LOW NOISE

PSEUDOMORPHIC HJ FET

NE32984D

DESCRIPTION

The NE32984D is a pseudomorphic Hetero-Junction FET that

uses the junction between Si-doped AlGaAs and undoped

InGaAs to create very high mobility electrons. The device

features mushroom shaped TiAl gates for decreased gate

resistance and improved power handling capabilities. The

mushroom gate also results in lower noise figure and high

associated gain. This device is housed in an epoxy-sealed,

metal/ceramic package and is intended for high volume con-

sumer and industrial applications.

NEC's stringent quality assurance and test procedures assure

the highest reliability and performance.

PART NUMBER

NE32984D

PACKAGE OUTLINE

84D

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

dB

0.40

0.50

dB

11.0

12.5

mA

20

60

90

µA

V

-2.0

-0.7

-0.2

mS

45

60

µA

0.5

10.0

Thermal Resistance (Channel to Ambient)

°C/W

750

Thermal Resistance (Channel to Case)

°C/W

350

NOISE FIGURE & ASSOCIATED

GAIN vs. FREQUENCY

Note:

1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually

measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line

as a "go-no-go" screening tuned for the "generic" type but not each specimen.

Frequency, f (GHz)

California Eastern Laboratories

NF

1.2

1.0

0.8

0.6

0.4

0.2

0

2

4

6

8

10

20

30

24

21

18

15

12

9

6