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FS10KM Datasheet(PDF) 2 Page - Powerex Power Semiconductors |
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FS10KM Datasheet(HTML) 2 Page - Powerex Power Semiconductors |
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2 / 4 page  Feb.1999 V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr MITSUBISHI Nch POWER MOSFET FS10KMH-03 HIGH-SPEED SWITCHING USE V µA mA V m Ω m Ω V S pF pF pF ns ns ns ns V °C/W ns 30 — — 0.6 — — — — — — — — — — — — — — — — — 0.9 68 88 0.34 12 540 160 55 12 35 45 40 1.0 — 35 — ±0.1 0.1 1.2 92 141 0.46 — — — — — — — — 1.5 8.3 — ELECTRICAL CHARACTERISTICS (Tch = 25 °C) Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol Unit Parameter Test conditions Limits Min. Typ. Max. ID = 1mA, VGS = 0V VGS = ±10V, VDS = 0V VDS = 30V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 4V ID = 5A, VGS = 2.5V ID = 5A, VGS = 4V ID = 5A, VDS = 5V VDS = 10V, VGS = 0V, f = 1MHz VDD = 15V, ID = 5A, VGS = 4V, RGEN = RGS = 50 Ω IS = 5A, VGS = 0V Channel to case IS = 5A, dis/dt = –50A/ µs 0 4 8 12 16 20 0 200 50 100 150 10–1 100 2 3 5 7 101 2 3 5 7 2 3 5 2100 35 7 2 101 35 7 2 2 102 35 7 5 7 tw = 10 ms TC = 25°C Single Pulse 100 ms 10ms 1ms DC POWER DISSIPATION DERATING CURVE CASE TEMPERATURE TC (°C) MAXIMUM SAFE OPERATING AREA DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN-SOURCE VOLTAGE VDS (V) 0 4 8 12 16 20 0 0.4 0.8 1.2 1.6 2.0 PD = 15W VGS = 5V Tc = 25°C Pulse Test 2.5V 1.5V 2V 3V 4V 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1.0 3V 2V 2.5V 1.5V 4V VGS = 5V Tc = 25°C Pulse Test PERFORMANCE CURVES |
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