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M25PE20-VMP6TG Datasheet(PDF) 1 Page - STMicroelectronics |
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M25PE20-VMP6TG Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 60 page January 2007 Rev 3 1/60 1 M25PE20 M25PE10 1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout Features ■ 1 or 2 Mbit of Page-Erasable Flash memory ■ 2.7 V to 3.6 V single supply voltage ■ SPI bus compatible serial interface ■ 50 MHz clock rate (maximum) ■ Page size: 256 bytes – Page Write in 11 ms (typical) – Page Program in 0.8 ms (typical) – Page Erase in 10 ms (typical) ■ SubSector Erase (32 Kbits) ■ Sector Erase (512 Kbits) ■ Bulk Erase (1 Mbit for the M25PE10, 2 Mbits for the M25PE20) ■ Deep Power-down mode 1µA (typical) ■ Electronic Signature – JEDEC Standard Two-Byte Signature (8012h for M25PE20 8011h for M25PE10) ■ Software Write Protection on a 64 Kbyte sector basis ■ More than 100 000 Write cycles ■ More than 20 year data retention ■ Hardware Write Protection of the memory area selected using the BP0 and BP1 bits ■ Package – ECOPACK® (RoHS compliant) SO8N (MN) 150 mil width VFQFPN8 (MP) 6 × 5 mm www.st.com |
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