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SYS32512ZK-015 Datasheet(PDF) 7 Page - MOSAIC

Part # SYS32512ZK-015
Description  512 K x 32 Static RAM
Download  11 Pages
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Manufacturer  MOSAIC [MOSAIC]
Direct Link  http://www.mosaicsemi.com
Logo MOSAIC - MOSAIC

SYS32512ZK-015 Datasheet(HTML) 7 Page - MOSAIC

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Issue 5.0 June 1999
PAGE 7
Valid Data
Address
/OE
/CS
Data In
Data Out
tWC
tAW
t
WR(5)
tCW(3)
tAS(4)
tWP(2)
tDW
tDH
tOHZ(6)
High Z
High Z(8)
/WE
NOTES(WRITE CYCLE)
1. All write cycle timing is referenced from the last valid address to the first transition address.
2. A write occurs during the overlap of a low /CS and /WE. A write begins at the latest transition /CS going low and /WE going low ;
A write ends at the earliest transition /CS going high or /WE going high. tWP is measured from the beginning of write to the end of
write.
3. tCW is measured from the later of /CS going low to end of write.
4. tAS is measured from the address valid to the beginning of write.
5. tWR is measured from the end of write to the address change. tWR applied in case a write ends as /CS or /WE going high.
6. If OE, /CS and /WE are in the Read Mode during this period, the I/O pins are in the output low-Z state. Inputs of opposite phase
of the output must not be applied because bus contention can occur.
7. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle.
8. If /CS goes low simultaneously with /WE going or after /WE going low, the outputs remain high impedance state.
9. Dout is the read data of the new address.
10.When /CS is low : I/O pins are in the output state. The input signals in the opposite phase leading to the output should not be
applied.
11 ./CS=/CS1~4
Write Cycle 1
(/OE = Clock)


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