SYS84000RKXL-85 datasheet(3/7 Pages) MOSAIC

Part #	SYS84000RKXL-85

Description	4M x 8 SRAM MODULE

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Manufacturer	MOSAIC [MOSAIC]

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SYS84000RKX - 85/10/12

ISSUE 1.7 April 2001

* Input pulse levels: 0V to 3.0V

* Input rise and fall times: 5ns

* Input and Output timing reference levels: 1.5V

* Output load: see diagram

* V

CC=5V±10%

AC Test Conditions

Output Load

Operation Truth Table

645

100pF

I/O Pin

1.76V

Ω

Parameter

Symbol

Test Condition

min

typ(1)

max

Unit

V

CC for Data Retention

V

DR

CS > V

CC-0.2V

2.0

-

V

Data Retention Current

V

CC = 3.0V, CS > VCC-0.2V

I

CCDR1

(2)

T

OP = 0°C to 70°C

-

1

mA

I

CCDR3

T

OP = TAI

-

TBA

uA

Chip Deselect to Data Retention Time

t

CDR

See Retention Waveform

0

-

ns

Operation Recovery Time

t

R

See Retention Waveform

5

-

ms

Notes

(1) Typical figures are measured at 25°C.

(2) This parameter is guaranteed not tested.

Low V

cc Data Retention Characteristics - L Version Only

CS

OE

WE

DATA PINS

SUPPLY CURRENT

MODE

H

X

High Impedance

ISB1 , ISB2 , ISB3, ISB4

Standby

L

Invalid State

~

Invalid

L

H

Data Out

ICC1

Read

L

H

L

Data In

ICC1

Write

L

H

High-Impedance

ICC1

High-Z

Notes : H = VIH : L =VIL : X = VIH or VIL

OE must not be tied low permanently.

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