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AO4706 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors

Part # AO4706
Description  N-Channel Enhancement Mode Field Effect Transistor
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AO4706 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors

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background image
Symbol
VDS
VGS
IDM
IAR
EAR
TJ, TSTG
Symbol
Typ
Max
31
40
59
75
RθJL
16
24
Avalanche Current
B
30
A
Repetitive avalanche energy L=0.3mH
B
135
mJ
°C
-55 to 150
A
13.2
3.1
W
2.0
A
Maximum
Units
Parameter
Maximum Junction-to-Ambient
A
Steady-State
Power Dissipation
TA=25°C
PDSM
Junction and Storage Temperature Range
TA=70°C
°C/W
Absolute Maximum Ratings TA=25°C unless otherwise noted
V
V
±12
Gate-Source Voltage
Drain-Source Voltage
30
IDSM
16.5
Maximum Junction-to-Lead
C
Steady-State
°C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t ≤ 10s
RθJA
°C/W
Pulsed Drain Current
B
100
TA=70°C
Continuous Drain
Current
AF
TA=25°C
AO4706
N-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) = 30V
ID =16.5A (VGS = 10V)
RDS(ON) < 6.8mΩ (VGS = 10V)
RDS(ON) < 8.2mΩ (VGS = 4.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
General Description
SRFET
TM The AO4706 uses advanced trench
technology with a monolithically integrated Schottky
diode to provide excellent RDS(ON),and low gate
charge. This device is suitable for use as a low side
FET in SMPS, load switching and general purpose
applications.
Standard Product AO4706 is Pb-free (meets ROHS
& Sony 259 specifications).
D
S
G
G
S
S
S
D
D
D
D
SRFET TM
SRFET
TM
Soft Recovery MOSFET:
Integrated Schottky Diode
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com


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