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S29PL256N70GAWW02 Datasheet(PDF) 4 Page - SPANSION |
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S29PL256N70GAWW02 Datasheet(HTML) 4 Page - SPANSION |
4 / 74 page 4 S29PL-N MirrorBit ™ Flash Family S29PL-N_00_A5 June 6, 2007 Data Sheet (Pre limin ar y) Performance Characteristics Note Typical program and erase times assume the following conditions: 25°C, 3.0 V VCC, 10,000 cycles; checkerboard data pattern. Read Access Times (@ 30 pF, Industrial Temp.) Random Access Time, ns (tACC) 65 70 Page Access Time, ns (tPACC) 25 30 Max CE# Access Time, ns (tCE) 65 70 Max OE# Access Time, ns (tOE) 25 30 Current Consumption (typical values) 8-Word Page Read 6 mA Simultaneous Read/Write 65 mA Program/Erase 25 mA Standby 20 µA Typical Program & Erase Times (typical values) (See Note) Typical Word 40 µs Typical Effective Word (32 words in buffer) 9.4 µs Accelerated Write Buffer Program 6 µs Typical Sector Erase Time (32-Kword Sector) 300 ms Typical Sector Erase Time (128-Kword Sector) 1.6 s Package Options S29PL-N VBH064 8.0 x 11.6 mm, 64-ball VBH084 8.0 x 11.6 mm, 84-ball 256 129 127 |
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