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BUK761R8-30C Datasheet(PDF) 6 Page - NXP Semiconductors |
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BUK761R8-30C Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 15 page BUK761R8-30C_2 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 02 — 20 August 2007 6 of 15 NXP Semiconductors BUK761R8-30C N-channel TrenchMOS standard level FET IDSS drain leakage current VDS =30V; VGS =0V; Tj =25 °C - 0.02 1 μA VDS =30V; VGS =0V; Tj = 175 °C -- 500 μA IGSS gate leakage current VDS =0V; VGS =20V; Tj =25 °C - 2 100 nA VDS =0V; VGS =-20 V; Tj =25 °C -2 100 nA RDSon drain-source on-state resistance VGS =10V; ID =25A; Tj = 175 °C; see Figure 12 and 13 -- 3.4 m Ω VGS =10V; ID =25A; Tj =25 °C; see Figure 12 and 13 -1.5 1.8 m Ω Source-drain diode VSD source-drain voltage IS =25A; VGS =0V; Tj =25 °C; see Figure 16 -0.85 1.2 V trr reverse recovery time IS =20A; dIS/dt = -100 A/μs; VGS =0V; VDS =25V -73 - ns Qr recovered charge IS =20A; dIS/dt = -100 A/μs; VGS =0V; VDS =25V -48 - nC Dynamic characteristics QG(tot) total gate charge ID =25A; VDS =24V; VGS =10V; see Figure 14 -150 -nC QGS gate-source charge ID =25A; VDS =24V; VGS =10V; see Figure 14 -36 - nC QGD gate-drain charge ID =25A; VDS =24V; VGS =10V; see Figure 14 -52 - nC VGS(pl) gate-source plateau voltage ID =25A; VDS =24V; see Figure 14 -5 -V Ciss input capacitance VGS =0V; VDS =25V; f=1MHz; Tj =25 °C; see Figure 15 - 7762 10349 pF Coss output capacitance VGS =0V; VDS =25V; f=1MHz; Tj =25 °C; see Figure 15 - 1807 2168 pF Crss reverse transfer capacitance VGS =0V; VDS =25V; f=1MHz; Tj =25 °C; see Figure 15 - 996 1365 pF td(on) turn-on delay time VDS =25V; RL =1.2 Ω; VGS =10V; RG(ext) =10 Ω -52 - ns tr rise time VDS =25V; RL =1.2 Ω; VGS =10V; RG(ext) =10 Ω -110 -ns td(off) turn-off delay time VDS =25V; RL =1.2 Ω; VGS =10V; RG(ext) =10 Ω -186 -ns Table 6. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit |
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