BT169D-L datasheet(6/12 Pages) NXP

Part #	BT169D-L

Description	Thyristor, logic level

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Manufacturer	NXP [NXP Semiconductors]

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BT169D-L_1

Product data sheet

Rev. 01 — 12 November 2007

6 of 12

NXP Semiconductors

BT169D-L

Thyristor, logic level

6.

Characteristics

Table 5.

Characteristics

Tj = 25 °C unless otherwise stated.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

IGT

gate trigger current

VD = 12 V; IT =10mA;

gate open circuit; see Figure 8

--50

µA

IL

latching current

VD = 12 V; IGT = 0.5 mA; RGK =1kΩ;

see Figure 10

-

26mA

IH

holding current

VD = 12 V; IGT = 0.5 mA; RGK =1kΩ;

see Figure 11

-

25mA

VT

on-state voltage

IT = 1.2 A

-

1.25

1.7

V

VGT

gate trigger voltage

IT = 10 mA; gate open circuit;

see Figure 7

VD = 12 V

-

0.5

0.8

V

VD =VDRM(max); Tj = 125 °C

0.2

0.3

-

V

ID

off-state current

VD =VDRM(max); Tj = 125 °C;

RGK =1kΩ

-

0.05

0.1

mA

Dynamic characteristics

dVD/dt

rate of rise of off-state

voltage

VDM = 0.67 × VDRM(max); Tj = 125 °C;

exponential waveform; see Figure 12

RGK =1kΩ

500

800

-

V/

µs

gate open circuit

-

25

-

V/

µs

tgt

gate-controlled turn-on

time

ITM = 2 A; VD =VDRM(max);IG = 10 mA;

dIG/dt = 0.1 A/µs

-2

-

µs

tq

commutated turn-off

time

VDM = 0.67 × VDRM(max); Tj = 125 °C;

ITM = 1.6 A; VR =35V;

(dIT/dt)M =30A/µs; dVD/dt = 2 V/µs;

RGK =1kΩ

-

100

-

µs

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