Note 19: Current drawn from IO during the EEPROM programming interval. The pullup circuit on IO during the programming interval

sequence. Interval ends once the device’s self-timed EEPROM programming cycle is complete and the current drawn by

Note 23: Not 100% production tested; guaranteed by reliability monitor sampling.

Note 25: Guaranteed by 100% production test at elevated temperature for a shorter time; equivalence of this production test to the

data sheet limit at operating temperature range is established by reliability testing.

Note 26: EEPROM writes can become nonfunctional after the data-retention time is exceeded. Long-term storage at elevated tem-

peratures is not recommended; the device can lose its write capability after 10 years at +125°C or 40 years at +85°C.

COMPARISON TABLE

LEGACY VALUES

DS2431 VALUES

STANDARD SPEED

(μs)

OVERDRIVE SPEED

(μs)

STANDARD SPEED

(μs)

OVERDRIVE SPEED

(μs)

PARAMETER

MIN

MAX

MIN

MAX

MIN

MAX

MIN

MAX

61

(undefined)

7

(undefined)

65*

(undefined)

8*

(undefined)

480

(undefined)

48

80

480

640

48

80

15

60

2

6

15

60

2

6

60

240

8

24

60

240

8

24

60

120

6

16

60

120

6

15.5

1024-Bit, 1-Wire EEPROM

4

_______________________________________________________________________________________

*

Intentional change; longer recovery time requirement due to modified 1-Wire front-end.

Note: Numbers in bold are not in compliance with legacy 1-Wire product standards.