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CXK77K36R320GB-3 Datasheet(PDF) 6 Page - Sony Corporation

Part # CXK77K36R320GB-3
Description  32Mb LW R-R HSTL High Speed Synchronous SRAM (1Mb x 36)
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Manufacturer  SONY [Sony Corporation]
Direct Link  http://www.sony.co.jp
Logo SONY - Sony Corporation

CXK77K36R320GB-3 Datasheet(HTML) 6 Page - Sony Corporation

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SONY®
CXK77K36R320GB
Preliminary
32Mb LW R-R, rev 0.6
6 / 22
March 16, 2004
DC Recommended Operating Conditions
(VSS = 0V, TA = 0 to 85
oC)
1. VDD = 1.8V ± 0.1V is also supported. Please contact Sony Memory Marketing Department for further information.
2. VDDQ = 1.8V ± 0.1V is also supported. Please contact Sony Memory Marketing Department for further information.
3. The peak-to-peak AC component superimposed on VREF may not exceed 5% of the DC component.
4. VIH (max) AC = VDDQ + 0.75V for pulse widths less than one-quarter of the cycle time (tCYC/4).
5. VIL (min) AC = -0.75V for pulse widths less than one-quarter of the cycle time (tCYC/4).
Parameter
Symbol
Min
Typ
Max
Units
Notes
Supply Voltage
VDD
2.37
2.5
2.63
V
1
Output Supply Voltage
VDDQ
1.4
1.5
1.6
V
2
Input Reference Voltage
VREF
VDDQ/2 - 0.1
VDDQ/2
VDDQ/2 + 0.1
V
3
Input High Voltage (Address, Control, Data)
VIH
VREF + 0.1
---
VDDQ + 0.3
V
4
Input Low Voltage (Address, Control, Data)
VIL
-0.3
---
VREF - 0.1
V
5
Input High Voltage (M1, M2)
VMIH
VREF + 0.3
---
VDD + 0.3
V
Input Low Voltage (M1, M2)
VMIL
-0.3
---
VREF - 0.3
V
Clock Input Signal Voltage
VKIN
-0.3
---
VDDQ + 0.3
V
Clock Input Differential Voltage
VDIF
0.2
---
VDDQ + 0.6
V
Clock Input Common Mode Voltage
VCM
VDDQ/2 - 0.1
VDDQ/2
VDDQ/2 + 0.1
V


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