STP7NB60_07 datasheet(3/11 Pages) STMICROELECTRONICS

Part #	STP7NB60

Description	N-CHANNEL 600V - 1.0 廓 - 7.2A TO-220/TO-220FP PowerMESH??MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STP7NB60/FP

ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise specified)

Table 6. Off

Table 7. On (1)

Note: 1. Pulsed: Pulse duration = 300

µs, duty cycle 1.5 %

Table 8. Dynamic

Note: 1. Pulsed: Pulse duration = 300

µs, duty cycle 1.5 %

Table 9. Switching On

Table 10. Switching Off

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 mA; VGS = 0

600

V

IDSS

Zero Gate Voltage

VDS = Max Rating

1

µA

Drain Current (VGS = 0)

VDS = Max Rating; Tc = 125 °C

50

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 30 V

± 100

nA

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage

VDS = VGS; ID = 250 µA3

4

5

V

RDS(on)

Static Drain-source On

Resistance

VGS = 10V; ID = 3.6 A

1.0

1.2

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Forward

Transconductance

VDS > ID(on) x RDS(on)max; ID = 3.6 A

4

5.3

S

Ciss

Input Capacitance

VDS = 25 V; f = 1 MHz; VGS = 0

1250

1625

pF

Coss

Output Capacitance

165

223

pF

Crss

Reverse Transfer

Capacitance

16

22

pF

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Time

VDD = 300 V; ID = 3.6 A RG = 4.7 Ω

18

27

ns

tr

Rise Time

VGS = 10 V (see test circuit, Figure 18)

8

12

ns

Qg

Total Gate Charge

VDD = 480 V ID = 7.2 A VGS = 10 V

30

45

nC

Qgs

Gate-Source Charge

9.9

nC

Qgd

Gate-Drain Charge

13.3

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

tr(Voff)

Off-voltage Rise Time

VDD = 480 V; ID = 7.2 A; RG = 4.7 Ω

812

ns

tf

Fall Time

VGS = 10 V (see test circuit, Figure 20)

5

8

ns

tc

Cross-over Time

15

23

ns

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