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MRF7S21150HSR3 Datasheet(PDF) 7 Page - Freescale Semiconductor, Inc |
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MRF7S21150HSR3 Datasheet(HTML) 7 Page - Freescale Semiconductor, Inc |
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7 / 13 page  MRF7S21150HR3 MRF7S21150HSR3 7 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS Figure 7. Intermodulation Distortion Products versus Output Power Pout, OUTPUT POWER (WATTS) PEP −70 −10 1 100 −40 −50 10 −30 −20 7th Order 5th Order 3rd Order 300 VDD = 28 Vdc, IDQ = 1350 mA f1 = 2135 MHz, f2 = 2145 MHz Two−Tone Measurements, 10 MHz Tone Spacing Figure 8. Intermodulation Distortion Products versus Tone Spacing TWO−TONE SPACING (MHz) 10 VDD = 28 Vdc, Pout = 120 W (PEP), IDQ = 1350 mA Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz IM3−U 0 −20 −40 180 −60 −30 IM3−L IM5−U IM5−L IM7−L IM7−U −50 Figure 9. Output Peak-to-Average Ratio Compression (PARC) versus Output Power 1 Pout, OUTPUT POWER (WATTS) −1 −3 −5 30 Actual Ideal 0 −2 −3 dB = 72.73 W 20 40 50 60 15 45 40 35 30 25 −1 dB = 39.58 W −2 dB = 54.29 W 80 Figure 10. Digital Predistortion Correction versus ACPR and Output Power Pout, OUTPUT POWER (dBm) 50 −65 −30 38 42 −45 −50 −55 −60 44 46 Uncorrected, Upper and Lower DPD Corrected No Memory Correction DPD Corrected with Memory Correction 48 300 13 19 0 60 Pout, OUTPUT POWER (WATTS) CW Figure 11. Power Gain and Drain Efficiency versus CW Output Power VDD = 28 Vdc IDQ = 1350 mA f = 2140 MHz TC = −30_C 25 _C 85 _C −30 _C 25 _C 85 _C 10 1 18 17 16 15 50 40 30 20 10 Gps ηD 100 14 −40 −35 40 −60 −10 −4 70 20 VDD = 28 Vdc, IDQ = 1350 mA, f = 2140 MHz Single−Carrier W−CDMA, Input Signal PAR = 7.5 dB, ACPR @ ±5 MHz Offset in 3.84 MHz, Integrated Bandwidth VDD = 28 Vdc, IDQ = 1350 mA f = 2140 MHz, Input Signal PAR = 7.5 dB |
Similar Part No. - MRF7S21150HSR3 |
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