TPCP8002 datasheet(5/7 Pages) TOSHIBA

Part #	TPCP8002

Description	TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV)

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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5 / 7 page

TPCP8002

2007-01-16

5

0.1

1

10

100

1000

10000

Common source

VGS = 0 V

f

= 1 MHz

Ta

= 25°C

Ciss

Coss

Crss

Ambient temperature Ta (°C)

RDS (ON) – Ta

Drain

−source voltage VDS (V)

IDR – VDS

Drain

−source voltage VDS (V)

C – VDS

Ambient temperature Ta (°C)

Vth – Ta

Ambient temperature Ta (°C)

PD – Ta

Total gate charge Qg (nC)

Dynamic input/output

characteristics

Common source

Ta

= 25°C

Pulse test

Common source

VDS = −10 V

ID = −200 μA

Pulse test

(1) Device mounted on a

glass-epoxy board (a)

(Note 2a)

(2) Device mounted on a

glass-epoxy board (b)

(Note 2b)

0

20

40

60

4

8

12

16

20

0

2

4

8

10

VDD = 16 V

4 V

8 V

VGS

Common source

ID = 9.1 A

Ta

= 25°C

Single Pulse test

VDS

6

0.1

0

10

100

−0.2

−0.4

−0.6

−0.8

−1.2

VGS = −1 V

1

0

5

3

1

−1

0.0

−80

−40

0

40

80

120

160

0.2

0.4

0.8

1.2

0.6

1.0

0.4

0.8

1.6

0

50

100

150

200

1.2

2.0

0

(1)

(2)

0

−80

−40

0

40

80

120

160

4

8

12

16

VGS = 4.5 V

2.5 V

ID = 2.3,4.5,9.1 A

20

Common source

Pulse test

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TPCP8002 Datasheet(PDF) 5 Page - Toshiba Semiconductor

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