TPCP8003-H datasheet(5/7 Pages) TOSHIBA

Part #	TPCP8003-H

Description	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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5 / 7 page

TPCP8003-H

2007-06-22

5

0

2

6

9

20

40

60

80

140

0

2

4

10

14

VDD = 80 V

20

VDS

8

7

4

40

100

120

3

8

5

6

12

40

20

VGS

VDD = 80 V

1

0

40

80

120

160

0

0.4

0.8

1.2

2

1.6

(2)

(1)

0

−80

−40

0

40

80

120

160

0.5

1

2.5

1.5

3

2

0.1

1

10

100

1

100

1000

Ciss

Coss

Crss

10

0

1

10

0.2

0.4

0.6

0.8

1.2

VGS = -1V

0

10

3

0.1

5

1.0

1

50

−80

−40

0

40

80

120

160

100

150

200

300

VGS = 4.5 V

10 V

ID = 2.2A

250

1.1A

Total gate charge Qg (nC)

Ambient temperature Ta (°C)

RDS (ON) – Ta

Drain-source voltage VDS (V)

IDR – VDS

Drain-source voltage VDS (V)

Capacitance – VDS

Ambient temperature Ta (°C)

Vth – Ta

Ambient temperature Ta (°C)

PD – Ta

Dynamic input/output

characteristics

(1)Device mounted on a glass-epoxy

board (a) (Note 2a)

(2)Device mounted on a glass-epoxy

board (b) (Note 2b)

ｔ＝

5s

Common source

Ta

= 25°C

Pulse test

Common source

Pulse test

Common source

VGS = 0 V

f

= 1 MHz

Ta

= 25°C

Common source

VDS = 10 V

ID = 1 mA

Pulse test

Common source

ID = 2.2 A

Ta

= 25°C

Pulse test

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TPCP8003-H Datasheet(PDF) 5 Page - Toshiba Semiconductor

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