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TPCS8105 Datasheet(PDF) 5 Page - Toshiba Semiconductor |
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TPCS8105 Datasheet(HTML) 5 Page - Toshiba Semiconductor |
5 / 7 page TPCS8105 2006-11-16 5 Ambient temperature Ta (°C) RDS (ON) – Ta Drain −source voltage VDS (V) IDR – VDS Drain −source voltage VDS (V) Capacitance – VDS Ambient temperature Ta (°C) Vth – Ta Ambient temperature Ta (°C) PD – Ta 0 −0.1 −1 −10 −100 0.2 0.4 0.6 0.8 1.0 −10 Common source Ta = 25°C Pulse test −5 −3 −1 VGS = 0 V −1.5 0 −80 −40 0 40 120 160 80 −0.5 −1.0 −2.0 −2.5 Common source VDS = −10 V ID = −1 mA Pulse test 100 150 175 0 0.8 1.2 1.6 2.0 0.4 0 50 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10 s (1) (2) 25 75 125 12 0 −80 −40 0 40 120 160 80 4 8 16 20 VGS = −4 V Common source Pulse test ID = −11 A −0.1 −1 −10 −100 10 100 1000 10000 Crss Coss Ciss Common source VGS = 0 V f = 1 MHz Ta = 25°C Total gate charge Qg (nC) Dynamic input/output characteristics 0 −10 −20 −30 0 20 40 60 80 Common source ID = −11 A Ta = 25°C Pulse test VDD = −24 V VDS VGS −6 −12 −12 −8 0 −4 140 VDD = −24 V −12 −6 −5 −15 −25 100 120 −10 −6 −2 −5 −2.5 ID = −11 A −5 −2.5 VGS = −10 V |
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Similar Description - TPCS8105 |
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