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G8370-81 Datasheet(PDF) 1 Page - Hamamatsu Corporation |
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G8370-81 Datasheet(HTML) 1 Page - Hamamatsu Corporation |
1 / 3 page PHOTODIODE InGaAs PIN photodiode Low PDL (Polarization Dependence Loss) G8370-81/-82/-83/-85 Features l Low PDL (Polarization Dependence Loss) l Low noise, low dark current l Large active area l Various active area sizes available Applications l Laser monitor l Optical power meter l Laser diode life test InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm. 1 s Specifications / Absolute maximum ratings Absolute maximum ratings Active area Reverse voltage VR Max. Operating temperature Topr Storage temperature Tstg Type No. Dimensional outline/ Window material * 1 Package (mm) (V) (°C) (°C) G8370-81 ➀/K TO-18 φ15 G8370-82 φ2 G8370-83 ➁/K TO-5 φ3 2 G8370-85 ➂/K TO-8 φ51 -40 to +85 -55 to +125 s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Photo sensitivity S Spectral response range Peak sensitivity wavelength λp 1.3 µm λ=λp Dark current ID VR=1 V Cut- off frequency fc V R=1 V R L =50 Ω -3 dB Terminal capacitance Ct V R=1 V f=1 M H z Shunt resistance Rsh VR=10 m V PDL λ=λp D∗ λ=λp NEP λ=λp Type No. (µm) (µm) Min. (A/W) Typ. (A/W) Min. (A/W) Typ. (A/W) Typ. (nA) Max. (nA) (MHz) (pF) (M Ω) Typ. (mdB) Max. (mdB) (cm· Hz1/2/W) (W/Hz1/2) G8370-81 1 5 35 90 100 2 × 10 -14 G8370-82 525 4 550 25 4 × 10 -14 G8370-83 15 75 2 1000 10 6 × 10 -14 G8370-85 0.9 to 1.7 1.55 0.8 0.9 0.85 1.1 25 * 2 125 *2 0.6 3500 3 5 10 5 × 10 12 1 × 10 -13 *1: Window material K: borosilicate glass with anti-reflective coating (optimized for 1.55 µm peak) *2: VR=0.1 V |
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