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QM30TB-2HB Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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QM30TB-2HB Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
2 / 5 page Feb.1999 Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25 °C DC Peak value of one cycle of 60Hz (half wave) Charged part to case, AC for 1 minute Mounting screw M5 Typical value Ratings 1000 1000 1000 7 30 30 310 2 300 –40~+150 –40~+125 2500 1.47~1.96 15~20 500 ABSOLUTE MAXIMUM RATINGS (Tj=25 °C, unless otherwise noted) Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Tj Tstg Viso — — Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mounting torque Weight Unit V V V V A A W A A °C °C V N·m kg·cm g MITSUBISHI TRANSISTOR MODULES QM30TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE ELECTRICAL CHARACTERISTICS (Tj=25 °C, unless otherwise noted) Unit mA mA mA V V V — µs µs µs °C/W °C/W °C/W Limits Min. — — — — — — 750 — — — — — — Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) –VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain Switching time Thermal resistance (junction to case) Contact thermal resistance (case to fin) Test conditions VCE=1000V, VEB=2V VCB=1000V, Emitter open VEB=7V IC=30A, IB=40mA –IC=30A (diode forward voltage) IC=30A, VCE=4V VCC=600V, IC=30A, IB1=60mA, –IB2=0.6A Transistor part (per 1/6 module) Diode part (per 1/6 module) Conductive grease applied (per 1/6 module) Typ. — — — — — — — — — — — — — Max. 2.0 2.0 50 4.0 4.0 1.8 — 2.5 15 3.0 0.4 1.5 0.25 |
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