Features

l High sensitivity

l Low dark current

l High linearity

Applications

l Analytical equipment

l Optical measurement equipment, etc.

PHOTODIODE

Si photodiode

For visible to IR, general-purpose photometry

S2387 series

s General ratings / Absolute maximum ratings

Absolute maximum ratings

Package

Active

area size

Effective

active area

Reverse

voltage

Operating

temperature

Topr

Storage

temperature

Tstg

Type No.

Dimensional

outline/

Window

material *

(mm)

(mm)

(mm

(V)

(°C)

(°C)

S2387-16R

➀/R

2.7 × 15

1.1 × 5.9

6.4

S2387-33R

➁/R

6 × 7.6

2.4 × 2.4

5.7

S2387-66R

➂/R

8.9 × 10.1

5.8 × 5.8

33

S2387-1010R

➃/R

15 × 16.5

10 × 10

100

S2387-130R

➄/R

3.0 × 40

1.2 × 29.1

35

30

-20 to +60

-20 to +80

s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)

Photo sensitivity

S

(A/W)

Short circuit

current

Isc

100 lx

Spectral

response

range

λ

Peak

sensi-

tivity

wave-

length

λp

λp

GaP

LED

He-Ne

laser

Min. Typ.

Temp.

coeffi-

cient

Shunt

resistance

Rsh

NEP

λ=λp

Dark

current

Max.

Rise time

tr

Ω

Terminal

capaci-

tance

Ct

f=10 kHz Min. Typ.

Type No.

(nm)

(nm)

560 nm 633 nm

(µA) (µA)

(pA)

(times/° C)

(µs)

(pF)

(G

S2387-16R

4.4

6.0

S2387-33R

4.4

5.8

5

1.8

730

2

50 9.9 × 10

-16

S2387-66R

24

31

50

10

4300

0.2 10 2.2 × 10

-15

S2387-1010R

68

91

200

33

12000

S2387-130R

320 to 1100 960

0.58

0.33

0.37

25

32

100

1.12

11

5000

0.1 20 1.6 × 10

-15

* Window material, R: resin coating

1