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S3902-256Q Datasheet(PDF) 1 Page - Hamamatsu Corporation

Part # S3902-256Q
Description  NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption
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Manufacturer  HAMAMATSU [Hamamatsu Corporation]
Direct Link  http://www.hamamatsu.com
Logo HAMAMATSU - Hamamatsu Corporation

S3902-256Q Datasheet(HTML) 1 Page - Hamamatsu Corporation

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NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning
circuit is made up of N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a large active
area, high UV sensitivity yet very low noise, delivering a high S/N even at low light levels. NMOS linear image sensors also offer excellent output
linearity and wide dynamic range.
The photodiodes of S3902 series have a height of 0.5 mm and are arrayed in a row at a spacing of 50 µm. The photodiodes of S3903 series also
have a height of 0.5 mm but are arrayed at a spacing of 25 µm. The photodiodes are available in 3 different pixel quantities for each series: 128
(S3902-128Q), 256 (S3902-256Q, S3903-256Q), 512 (S3902-512Q, S3903-512Q) and 1024 (S3903-1024Q). Quartz glass is the standard window
material.
Features
l Wide active area
Pixel pitch: 50 µm (S3902 series)
25 µm (S3903 series)
Pixel height: 0.5 mm
l High UV sensitivity with good stability
l Low dark current and high saturation charge allow a long
integration time and a wide dynamic range at room temperature
l Excellent output linearity and sensitivity spatial uniformity
l Lower power consumption: 1 mW Max.
l Start pulse and clock pulses are CMOS logic compatible
Applications
l Multichannel spectrophotometry
l Image readout system
IMAGE
SENSOR
NMOS linear image sensor
Current output, high UV sensitivity, excellent linearity, low power consumption
S3902/S3903 series
OXIDATION SILICON
N TYPE SILICON
P TYPE SILICON
S3902 SERIES: a=50 µm, b=45 µm
S3903 SERIES: a=25 µm, b=20 µm
b
a
KMPDC0020EA
Figure 1 Equivalent circuit
Vss
START
st
CLOCK
CLOCK
1
2
ACTIVE
PHOTODIODE
SATURATION
CONTROL GATE
SATURATION
CONTROL DRAIN
DUMMY DIODE
DUMMY VIDEO
ACTIVE VIDEO
END OF SCAN
DEGITAL SHIFT RE
GISTER
(MOS SHIFT RE
GISTER)
Figure 2 Active area structure
KMPDA0107EA
s
Absolute maximum ratings
Parameter
Symbol
Value
Unit
Input pulse (φ1, φ2, φst) voltage
15
V
Power consumption *1
P
1
mW
Operating temperature *2
Topr
-40 to +65
°C
Storage temperature
Tstg
-40 to +85
°C
*1: Vφ=5.0 V
*2: No condensation


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