S6045 series

Features

Applications

PHOTODIODE

Si APD

Low temperature coefficient type APD for 800 nm band

s General ratings / Absolute maximum ratings

Absolute maximum ratings

Effective active

area size *

2

Effective active

area

Operating

temperature

Topr

Storage

temperature

Tstg

Type No.

Dimensional

outline/

Window

material *

1

Package

(mm)

(mm

(°C)

(°C)

S6045-01

φ0.2

0.03

S6045-02

φ0.5

0.19

S6045-03

➀/K

TO-18

φ1.0

0.78

S6045-04

➁/K

φ1.5

1.77

S6045-05

➂/K

TO-5

φ3.0

7.0

S6045-06

{/K

TO-8

φ5.0

19.6

-40 to +85

-55 to +125

s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)

Brea kdow n

vo lta ge

Dark

current *

3

Spec tral

re sp on se

ra ng e

λ

sensitivity

wavelength

λp

Photo

sensitivity

S

M=1

λ=800 nm

Quantum

efficiency

QE

M=1

λ=800 nm

Tem p .

coe fficien t

of

Cut-off

fc

Ω

Terminal

Ct

Excess

noise

figure *

3

x

λ=800 nm

Gain

M

λ=800 nm

Type No.

(nm)

(nm)

(A/W)

(%)

Typ.

(V)

Max.

(V)

(V/°C)

Typ.

(nA)

Max.

(nA)

(MHz)

(pF)

S6045-01

0.05 0.5

1000

1.5

S6045-02

0.1

1

900

3

S6045-03

0.2

2

600

6

S6045-04

0.5

5

350

12

100

S6045-05

1

10

80

50

60

S6045-06

40 0 to 1 00 0

800

0.5

75

200 300

0.4

330

35

120

0.3

40

*1: K: borosilicate glass

*2: Area in which a typical gain can be obtained.

*3: Values measured at a gain listed in the characteristics table.

1