CCD area image sensor

S7017 series

s Absolute maximum ratings (Ta=25 °C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Operating temperature

Topr

-50

-

+30

°C

Storage temperature

Tstg

-100

-

+70

°C

OD voltage

-0.5

-

+25

V

RD voltage

-0.5

-

+18

V

ISV voltage

-0.5

-

+18

V

ISH voltage

-0.5

-

+18

V

IGV voltage

-10

-

+15

V

IGH voltage

-10

-

+15

V

SG voltage

-10

-

+15

V

OG voltage

-10

-

+15

V

RG voltage

-10

-

+15

V

TG voltage

-10

-

+15

V

Vertical clock voltage

-10

-

+15

V

Horizontal clock voltage

-10

-

+15

V

s Operating conditions (MPP mode, Ta=25 °C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Output transistor drain voltage

18

20

22

V

Reset drain voltage

11.5

12

12.5

V

Output gate voltage

13

5

V

Substrate voltage

-

0

-

V

Test point (vertical input source)

-V

Test point (horizontal input source)

-

-

V

Test point (vertical input gate)

-8

0

-

V

Test point (horizontal input gate)

-8

0

-

V

High

46

8

Vertical shift register

clock voltage

Low

-9

-8

-7

V

High

4

6

8

Horizontal shift register

clock voltage

Low

-9

-8

-7

V

High

46

8

Summing gate voltage

Low

-9

-8

-7

V

High

4

6

8

Reset gate voltage

Low

-9

-8

-7

V

High

46

8

Transfer gate voltage

Low

-9

-8

-7

V

s Electrical characteristics (Ta=25 °C)

Parameter

Symbol

Remark

Min.

Typ.

Max.

Unit

Signal output frequency

fc

-

-

80

2,000

kHz

Reset clock frequency

frg

-

-

80

2,000

kHz

S7017-1007

-

-

3,200

-

Vertical shift register

capacitance

S7017-1008

-

-

6,400

-

pF

Horizontal shift register capacitance

-

-

300

-

pF

Summing gate capacitance

--

7

-

pF

Reset gate capacitance

-

-

7

-

pF

Transfer gate capacitance

-

-

150

-

pF

Transfer efficiency

CTE

0.99995

0.99999

-

-

DC output level

Vout

12

15

18

V

Output impedance

Zo

-

3

-

k

Ω

Power dissipation

P

-15

-

mW

*1: Charge transfer efficiency per pixel, measured at half of the full well capacity.

Ω

*3: Power dissipation of the on-chip amplifier.

2