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2SC3425 Datasheet(PDF) 4 Page - Toshiba Semiconductor

Part # 2SC3425
Description  Silicon NPN Triple Diffused Type (PCT Process)
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC3425 Datasheet(HTML) 4 Page - Toshiba Semiconductor

  2SC3425_06 Datasheet HTML 1Page - Toshiba Semiconductor 2SC3425_06 Datasheet HTML 2Page - Toshiba Semiconductor 2SC3425_06 Datasheet HTML 3Page - Toshiba Semiconductor 2SC3425_06 Datasheet HTML 4Page - Toshiba Semiconductor 2SC3425_06 Datasheet HTML 5Page - Toshiba Semiconductor 2SC3425_06 Datasheet HTML 6Page - Toshiba Semiconductor  
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2SC3425
2006-11-09
4
Base-emitter voltage VBE (V)
IC – VBE
Base-emitter voltage VBE (V)
IC – VBE
Collector current IC (A)
Switching Characteristics
1
10
−1
0.4
0.6
0.8
1.0
1.4
0
Tc = 100°C
−40
25
Common emitter
VCE = 5 V
10
−2
10
−3
0.2
1.2
1000
0
0
800
600
400
200
0.4
0.6
0.8
1.0
1.2
0.2
Common emitter
VCE = 5 V
Tc = 100°C 25
−40
100
0.1
0
30
10
1
0.5
0.1
0.2
0.5
tf
tstg
IC/IB = 10
IB1 = −IB2
Pulse width = 20 μs
Duty cycle ≤ 1%
Tc = 25°C
3
5
50
0.3
0.4
0.3
tr


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