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2SC3425 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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2SC3425 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page 2SC3425 2006-11-09 4 Base-emitter voltage VBE (V) IC – VBE Base-emitter voltage VBE (V) IC – VBE Collector current IC (A) Switching Characteristics 1 10 −1 0.4 0.6 0.8 1.0 1.4 0 Tc = 100°C −40 25 Common emitter VCE = 5 V 10 −2 10 −3 0.2 1.2 1000 0 0 800 600 400 200 0.4 0.6 0.8 1.0 1.2 0.2 Common emitter VCE = 5 V Tc = 100°C 25 −40 100 0.1 0 30 10 1 0.5 0.1 0.2 0.5 tf tstg IC/IB = 10 IB1 = −IB2 Pulse width = 20 μs Duty cycle ≤ 1% Tc = 25°C 3 5 50 0.3 0.4 0.3 tr |
Similar Part No. - 2SC3425_06 |
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Similar Description - 2SC3425_06 |
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