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2SC3963 Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part # 2SC3963
Description  Silicon NPN Triple Diffused Type (PCT Process) High-Voltage General Amplifier Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC3963 Datasheet(HTML) 1 Page - Toshiba Semiconductor

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2SC3963
2006-11-10
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
2SC3963
High-Voltage General Amplifier Applications
Color TV Class B Sound Output Applications
• High voltage: VCEO = 160 V
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
200
V
Collector-emitter voltage
VCEO
160
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
200
mA
Base current
IB
100
mA
Collector power dissipation
PC
1.5
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)


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