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2SC3963 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SC3963 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page 2SC3963 2006-11-10 2 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 200 V, IE = 0 ― ― 0.1 μA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ― ― 0.1 μA hFE (1) (Note) VCE = 10 V, IC = 50 mA 100 ― 320 DC current gain hFE (2) VCE = 10 V, IC = 150 mA 80 ― ― Collector-emitter saturation voltage VCE (sat) IC = 200 mA, IB = 20 mA ― ― 1.0 V Base-emitter voltage VBE VCE = 10 V, IC = 5 mA 0.55 0.65 0.75 V Transition frequency fT VCE = 10 V, IC = 50 mA 50 ― ― MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ― ― 10 pF Note: hFE (1) classification O: 100 to 200, Y: 160 to 320 Marking C3963 Part No. (or abbreviation code) Characteristics indicator Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. |
Similar Part No. - 2SC3963_06 |
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Similar Description - 2SC3963_06 |
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