1SS361FV

2007-11-01

1

TOSHIBA Diode Silicon Epitaxial Planar Type

1SS361FV

Ultra-High-Speed Switching Applications

Small package

Excellent in forward current and forward voltage

characteristics

Small total capacitance

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

85

V

Reverse voltage

80

V

Maximum (peak) forward current

300 *

mA

Average forward current

100 *

mA

Surge current (10 ms)

2 *

A

Power dissipation

P

150 **

mW

Junction temperature

150

°C

Storage temperature range

−55∼150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

*: Unit rating. Total rating = unit rating × 1.5

**

: Mounted on an FR4 board (25.4 mm

× 25.4 mm × 1.6 mmt)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

―

0.60

―

―

0.72

―

Forward voltage

―

0.90

1.2

V

―

―

0.1

Reverse current

―

―

0.5

μA

Total capacitance

―

0.9

―

pF

Reverse recovery time

(Fig. 1)

―

1.6

4.0

ns

JEDEC

―

JEITA

―

TOSHIBA

1-1Q1A

Weight: 1.5 mg (typ.)

Unit: mm

VESM

1

2

3

0.8±0.05

1.2±0.05

1. ANODE 1

2. ANODE2

3. CATHODE

0.5 mm

0.45 mm

0.45 mm

0.4 mm